Highly linear mm-wave CMOS power amplifier
A Ka-band highly linear power amplifier (PA) is implemented in 28-nm bulk CMOS
technology. Using a deep class-AB PA topology with appropriate harmonic control circuit …
technology. Using a deep class-AB PA topology with appropriate harmonic control circuit …
Review of Ka-Band power amplifier
Z Wang, S Hu, L Gu, L Lin - Electronics, 2022 - mdpi.com
With the increase in the demand for high-speed transmission communication, satellite
communication is developing rapidly. Because of the bandwidth capacity, the K/Ka band is …
communication is developing rapidly. Because of the bandwidth capacity, the K/Ka band is …
Dual-mode CMOS Doherty LTE power amplifier with symmetric hybrid transformer
E Kaymaksut, P Reynaert - IEEE Journal of Solid-State Circuits, 2015 - ieeexplore.ieee.org
This paper presents a dual-mode Doherty long-term evolution (LTE) power amplifier (PA) for
efficiency enhancement at power back-off. The amplifier utilizes transformer-based Doherty …
efficiency enhancement at power back-off. The amplifier utilizes transformer-based Doherty …
Linearization of CMOS cascode power amplifiers through adaptive bias control
Highly linear and efficient CMOS cascode power amplifiers (PAs) are developed for handset
applications. The linearity of the PAs is improved using adaptive bias circuits at the gates of …
applications. The linearity of the PAs is improved using adaptive bias circuits at the gates of …
Asymmetric broadband Doherty power amplifier using GaN MMIC for femto-cell base-station
A power amplifier (PA) for a femto-cell base station should be highly efficient and small. The
efficiency for amplification of a high peak-to-average power ratio (PAPR) signal is improved …
efficiency for amplification of a high peak-to-average power ratio (PAPR) signal is improved …
High-performance CMOS power amplifier with improved envelope tracking supply modulator
A differential cascode CMOS power amplifier (PA) with a supply modulator for envelope
tracking (ET) has been implemented using 0.18-μm RF CMOS technology. For maximizing …
tracking (ET) has been implemented using 0.18-μm RF CMOS technology. For maximizing …
A two-stage broadband fully integrated CMOS linear power amplifier for LTE applications
This brief presents the implementation and measurement results of a CMOS broadband
linear power amplifier (PA) for long-term evolution (LTE) applications. Interstage matching …
linear power amplifier (PA) for long-term evolution (LTE) applications. Interstage matching …
CMOS saturated power amplifier with dynamic auxiliary circuits for optimized envelope tracking
A CMOS saturated power amplifier (PA) is developed for optimally implementing the
envelope-tracking (ET) transmitter. The CMOS saturated PA is used to maximize the …
envelope-tracking (ET) transmitter. The CMOS saturated PA is used to maximize the …
A CMOS antiphase power amplifier with an MGTR technique for mobile applications
In this paper, a CMOS antiphase power amplifier (PA) is presented with a multigate
transistor (MGTR) technique that improves its linearity. The drive stage of the PA is biased in …
transistor (MGTR) technique that improves its linearity. The drive stage of the PA is biased in …
Analytical noise optimization of single-/dual-band MOS LNAs with substrate and metal loss effects of inductors
WL Chang, C Meng, JH Ni, KC Chang… - … on Circuits and …, 2019 - ieeexplore.ieee.org
Analytical noise formulations and design optimization of single-and dual-band inductively
source-degenerated MOS low-noise amplifiers (LNAs) with the substrate and metal loss …
source-degenerated MOS low-noise amplifiers (LNAs) with the substrate and metal loss …