Highly linear mm-wave CMOS power amplifier

B Park, S Jin, D Jeong, J Kim, Y Cho… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
A Ka-band highly linear power amplifier (PA) is implemented in 28-nm bulk CMOS
technology. Using a deep class-AB PA topology with appropriate harmonic control circuit …

Review of Ka-Band power amplifier

Z Wang, S Hu, L Gu, L Lin - Electronics, 2022 - mdpi.com
With the increase in the demand for high-speed transmission communication, satellite
communication is developing rapidly. Because of the bandwidth capacity, the K/Ka band is …

Dual-mode CMOS Doherty LTE power amplifier with symmetric hybrid transformer

E Kaymaksut, P Reynaert - IEEE Journal of Solid-State Circuits, 2015 - ieeexplore.ieee.org
This paper presents a dual-mode Doherty long-term evolution (LTE) power amplifier (PA) for
efficiency enhancement at power back-off. The amplifier utilizes transformer-based Doherty …

Linearization of CMOS cascode power amplifiers through adaptive bias control

S Jin, B Park, K Moon, M Kwon… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
Highly linear and efficient CMOS cascode power amplifiers (PAs) are developed for handset
applications. The linearity of the PAs is improved using adaptive bias circuits at the gates of …

Asymmetric broadband Doherty power amplifier using GaN MMIC for femto-cell base-station

S Jee, J Lee, J Son, S Kim, CH Kim… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
A power amplifier (PA) for a femto-cell base station should be highly efficient and small. The
efficiency for amplification of a high peak-to-average power ratio (PAPR) signal is improved …

High-performance CMOS power amplifier with improved envelope tracking supply modulator

B Park, D Kim, S Kim, Y Cho, J Kim… - IEEE Transactions …, 2016 - ieeexplore.ieee.org
A differential cascode CMOS power amplifier (PA) with a supply modulator for envelope
tracking (ET) has been implemented using 0.18-μm RF CMOS technology. For maximizing …

A two-stage broadband fully integrated CMOS linear power amplifier for LTE applications

K Kim, J Ko, S Lee, S Nam - … on Circuits and Systems II: Express …, 2016 - ieeexplore.ieee.org
This brief presents the implementation and measurement results of a CMOS broadband
linear power amplifier (PA) for long-term evolution (LTE) applications. Interstage matching …

CMOS saturated power amplifier with dynamic auxiliary circuits for optimized envelope tracking

S Jin, K Moon, B Park, J Kim, Y Cho… - IEEE Transactions …, 2014 - ieeexplore.ieee.org
A CMOS saturated power amplifier (PA) is developed for optimally implementing the
envelope-tracking (ET) transmitter. The CMOS saturated PA is used to maximize the …

A CMOS antiphase power amplifier with an MGTR technique for mobile applications

J Park, C Lee, J Yoo, C Park - IEEE Transactions on Microwave …, 2017 - ieeexplore.ieee.org
In this paper, a CMOS antiphase power amplifier (PA) is presented with a multigate
transistor (MGTR) technique that improves its linearity. The drive stage of the PA is biased in …

Analytical noise optimization of single-/dual-band MOS LNAs with substrate and metal loss effects of inductors

WL Chang, C Meng, JH Ni, KC Chang… - … on Circuits and …, 2019 - ieeexplore.ieee.org
Analytical noise formulations and design optimization of single-and dual-band inductively
source-degenerated MOS low-noise amplifiers (LNAs) with the substrate and metal loss …