Gate oxide degradation of SiC MOSFET in switching conditions
Under realistic switching conditions, SiC MOSFETs reliability issues remain as a challenge
that requires further investigation. In this letter, a specific aging test has been developed to …
that requires further investigation. In this letter, a specific aging test has been developed to …
[HTML][HTML] In situ thermal runaway of Si-based press-fit diodes monitored by infrared thermography
A Moure, S Román-Sánchez, A Serrano, I Lorite… - Results in Physics, 2020 - Elsevier
Overvoltage is one of the main causes that lead to the failure of electronic devices. This
makes fundamental to understand the electrical and thermal mechanisms engaged in the …
makes fundamental to understand the electrical and thermal mechanisms engaged in the …
Measurement uncertainty in Fourier coefficient-based time series reconstruction considering calibration effects in thermal imaging
R Solé, C Ferrer, O Aviñó-Salvadó… - IEEE Transactions …, 2024 - ieeexplore.ieee.org
A robust methodology is proposed for determining and assessing measurement
uncertainties in thermal imaging systems when the Fourier coefficient-based time …
uncertainties in thermal imaging systems when the Fourier coefficient-based time …
A new vertical JFET power device for harsh radiation environments
An increasing demand for power electronic devices able to be operative in harsh radiation
environments is now taking place. Specifically, in High Energy Physics experiments the …
environments is now taking place. Specifically, in High Energy Physics experiments the …
The Surge Current Failure and Thermal Analysis of 4H-SiC Schottky Barrier Diode
B Zhang, Y Zhong, P Cui, Y Cui, M Xu… - … on Electron Devices, 2024 - ieeexplore.ieee.org
The surge current capability is one of the key parameters for the application of silicon
carbide (SiC) Schottky barrier diode (SBD) in power converters. In this study, the surge …
carbide (SiC) Schottky barrier diode (SBD) in power converters. In this study, the surge …
Functional and consumption analysis of integrated circuits supplied by inductive power transfer by powering modulation and lock-in infrared imaging
J Leon, X Perpina, J Sacristan… - IEEE Transactions …, 2015 - ieeexplore.ieee.org
The functionality and consumption of a Radio Frequency IDentification Integrated Circuit
(RFID IC) supplied by inductive power transfer has been noninvasively analyzed. This has …
(RFID IC) supplied by inductive power transfer has been noninvasively analyzed. This has …
Thermal phase lag heterodyne infrared imaging for current tracking in radio frequency integrated circuits
With thermal phase lag measurements, current paths are tracked in a Class A radio
frequency (RF) power amplifier at 2 GHz. The amplifier is heterodynally driven at 440 MHz …
frequency (RF) power amplifier at 2 GHz. The amplifier is heterodynally driven at 440 MHz …
The role of interface effects and minority carriers in the metal-semiconductor Schottky junction
SU Omar - 2014 - search.proquest.com
The metal-semiconductor (MS) Schottky barrier junction, formed by putting a metal in contact
with a semiconductor crystal, is the simplest form of electronic rectifier. Despite the simple …
with a semiconductor crystal, is the simplest form of electronic rectifier. Despite the simple …
[图书][B] Advanced analysis of microelectronic devices and systems by lock-in IR thermography
J León Cerro - 2016 - ddd.uab.cat
Desde los inicios de la revolución microelectrónica, su evolución tecnológica siempre se ha
visto marcada por la búsqueda constante de dispositivos y sistemas electrónicos …
visto marcada por la búsqueda constante de dispositivos y sistemas electrónicos …
Effects of Laser Excitation and Temperature on Ag/GaSe0.5S0.5/C Microwave Filters
AF Qasrawi, HK Khanfar - Journal of electronic materials, 2014 - Springer
The effects of temperature, illumination, and microwave signals on Ag/GaS 0.5 S 0.5/C
Schottky-type microwave filters have been investigated. The devices, which were produced …
Schottky-type microwave filters have been investigated. The devices, which were produced …