The few-electron ground states of self-assembled InAs quantum dots are investigated using
high-resolution capacitance spectroscopy in magnetic fields up to 23 T. The level structure …

Recent experiments, which study the electronic structure of self-organized InAs
nanostructures, are summarized. The results from simultaneously performed far-infrared …

We have employed time-dependent local-spin-density theory to analyze the far-infrared
transmission spectrum of InAs self-assembled nanoscopic rings recently reported [A. Lorke …

We present a systematic study of ground state and spectroscopic properties of many-
electron nanoscopic quantum rings. Addition energies at zero magnetic field (B) and …

Electronic Structure of Nanometer-Size Quantum Dots and Quantum Rings Page 1
Microelectronic Engineering 47 (1999) 95-99 Electronic Structure of Nanometer-Size Quantum …

We have employed time-dependent local-spin density-functional theory to analyze the
multipole spin and charge density excitations in GaAs− Al x Ga 1− x As quantum dots. The …

Since several years zero-dimensional systems attract more and more attention due to their
interesting physical properties1–3 and their potential applications for new and better …

We investigate the capacitance–voltage, C (V), characteristics of a series of single-barriern–i–
n GaAs/AlAs/GaAs heterostructures incorporating a layer of self-assembled InAs quantum …

The electron tunneling through single self-assembled InAs dot in split-gate δ-doped channel
transistor structure is reported for the first time. In the nearly pinch-off conditions, the channel …

Electron states in self-assembled InAs dots have been studied by a novel approach of
conductance spectroscopy in a transistor structure by monitoring the conductance …