Ultralow-voltage field-effect transistors using nanometer-thick transparent amorphous indium–gallium–zinc oxide films
A Mukherjee, V Ottapilakkal, S Sagar… - ACS Applied Nano …, 2021 - ACS Publications
The design of solution-processed transparent transistors with ultralow-voltage operations
and a planar architecture can be a paradigm shift toward the realization of ultralow-power …
and a planar architecture can be a paradigm shift toward the realization of ultralow-power …
Analog and mixed signal circuit design techniques in flexible unipolar a-IGZO TFT technology: Challenges and recent trends
M Zulqarnain, E Cantatore - IEEE Open Journal of Circuits and …, 2021 - ieeexplore.ieee.org
Advancements in the field of flexible electronics have enabled many novel applications such
as wearables, flexible large-area displays, and textile-based sensor systems. A widely used …
as wearables, flexible large-area displays, and textile-based sensor systems. A widely used …
High mobility silicon indium oxide thin-film transistor fabrication by sputtering process
Amorphous silicon indium oxide (a-ISO) thin-films were deposited by sputtering process at
room temperature for thin-film transistor (TFT) active channel applications. The amorphous …
room temperature for thin-film transistor (TFT) active channel applications. The amorphous …
High performance UV photodetectors based on W doped δ-Ta2O5 single crystalline films
Y Le, X Ma, H Xiao, C Luan, B Zhang, J Ma - Applied Physics Letters, 2023 - pubs.aip.org
Amorphous or polycrystalline tantalum pentoxide (Ta 2 O 5) films with high resistance have
been widely used in semiconductor devices as insulating dielectric layers. In this work …
been widely used in semiconductor devices as insulating dielectric layers. In this work …
Synthesis of δ-Ta2O5 heteroepitaxial films on YVO4 (100) substrates
Y Le, X Ma, D Wang, H Xiao, C Luan, J Ma - Materials Science in …, 2021 - Elsevier
Hexagonal tantalum pentoxide (δ-Ta 2 O 5) single-crystalline films were synthesized on
Yttrium Vanadate (YVO 4)(100) by metalorganic chemical vapor deposition (MOCVD) and …
Yttrium Vanadate (YVO 4)(100) by metalorganic chemical vapor deposition (MOCVD) and …
Deposition of c-axis aligned crystalline InGaZnO by mist atmospheric pressure chemical vapor deposition for thin-film transistor applications
HY Liu, HC Hung, WT Chen - IEEE Transactions on Electron …, 2020 - ieeexplore.ieee.org
This study uses mist atmospheric pressure chemical vapor deposition with
deposition/annealing cyclic method to grow c-axis aligned crystalline (CAAC) InGaZnO. The …
deposition/annealing cyclic method to grow c-axis aligned crystalline (CAAC) InGaZnO. The …
High bias stability of Hf-doping-modulated indium oxide thin-film transistors
W Li, C Gao, X Li, J Yang, J Zhang, J Chu - Microelectronic Engineering, 2024 - Elsevier
Device stability is one of the key parameters for transistor applications. To improve the
stability of Indium oxide (In 2 O 3) after a long-time gate bias, a synthetic solution of hafnium …
stability of Indium oxide (In 2 O 3) after a long-time gate bias, a synthetic solution of hafnium …
High capacitance dielectrics for low voltage operated OFETs
N Mohammadian, LA Majewski - Integrated Circuits/Microchips, 2020 - books.google.com
Low-voltage, organic field-effect transistors (OFETs) have a high potential to be key
components of low-cost, flexible, and large-area electronics. However, to be able to employ …
components of low-cost, flexible, and large-area electronics. However, to be able to employ …
Low-temperature n-type doping of insulating ultrathin amorphous indium oxide using H plasma-assisted annealing
Low-temperature process compatibility is a key factor in successfully constructing additional
functional circuits on top of pre-existing circuitry without corrupting characteristics thereof, a …
functional circuits on top of pre-existing circuitry without corrupting characteristics thereof, a …
High Field-Effect Mobility Two-Channel InGaZnO Thin-Film Transistors for Low-Voltage Operation
KR Yun, HS Lee, JH Kim, TJ Lee… - … on Electron Devices, 2021 - ieeexplore.ieee.org
In this study, two-channel thin-film transistors (TC TFTs) using sputtered-deposited
amorphous indium–gallium–zinc oxide (a-IGZO) as a channel layer and atomic-layer …
amorphous indium–gallium–zinc oxide (a-IGZO) as a channel layer and atomic-layer …