BAT framework modeling of RMG HKMG Si and SiGe channel FinFETs

A Generic Trap Generation Framework for MOSFET Reliability—Part I: Gate Only Stress–BTI, SILC, and TDDB

S Mahapatra, A Ansari, AS Bisht… - … on Electron Devices, 2023 - ieeexplore.ieee.org
The Reaction-Diffusion-Drift model is validated as a trap generation framework during Bias
Temperature Instability (BTI), Stress Induced Leakage Current (SILC), and Time Dependent …
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