Featured Application GaN based vertical-cavity surface-emitting lasers. Abstract A
distributed Bragg reflector (DBR) is a key building block in the formation of semiconductor …

In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …

The critical thickness gives the transition point between fully strained and relaxed
heteroepitaxial films and determines the onset of defect generation, including misfit …

Vertically injected thin-film ultraviolet light-emitting diodes operating at 325 and 280 nm are
demonstrated. Low-temperature AlN interlayers allow crack-free growth of Al x Ga 1− x N …

Emission from a 285 nm AlGaN quantum well light emitting diode has been studied by
scanning near-field optical spectroscopy. The scans revealed micrometer-size domainlike …

We have developed a virtual GaN substrate on sapphire based on a two-step growth
method. By optimizing the growth scheme for the virtual substrate we have improved crystal …

Growth of ternary AlGaN nanowires using metalorganic chemical vapor deposition is
investigated. Structural, chemical, and optical characterization at nanoscopic scale is carried …

Structural characterization of strained AlGaN layers in different Al content AlGaN∕GaN
heterostructures and its effect on two-dimensional electron transport propertiesa) | Journal of …

We report the growth of horizontally aligned arrays and networks of GaN nanowires (NWs)
as resonant components in nanoelectromechanical systems (NEMS). A combination of top …

The influences of a high-temperature (HT) AlN interlayer (IL) on the phase separation in
crack-free AlGaN grown on GaN have been studied. The depth-dependent …