Lattice location and optical activation of rare earth implanted GaN
U Wahl, E Alves, K Lorenz, JG Correia… - Materials Science and …, 2003 - Elsevier
This paper reviews the current knowledge on rare earths (REs) implanted into GaN with a
special focus on their lattice location and on the optical activation by means of thermal …
special focus on their lattice location and on the optical activation by means of thermal …
Photoluminescence and lattice location of Eu and Pr implanted GaN samples
T Monteiro, C Boemare, MJ Soares… - Physica B: Condensed …, 2001 - Elsevier
Rare earth (RE) ions implanted GaN films were studied by optical spectroscopy and RBS
techniques. Sharp emission lines due to intra-4fn shell transitions can be observed even at …
techniques. Sharp emission lines due to intra-4fn shell transitions can be observed even at …
Thermal quenching of luminescence and isovalent trap model for rare‐earth‐ion‐doped AlN
HJ Lozykowski, WM Jadwisienczak - physica status solidi (b), 2007 - Wiley Online Library
Investigations of the luminescent properties of Pr‐, Eu‐, Tb‐and Tm‐implanted AlN thin films
at temperature in the range 9–830 K are reported. The temperature studies of …
at temperature in the range 9–830 K are reported. The temperature studies of …
Implantation site of rare earths in single-crystalline ZnO
The lattice location of rare-earth Er 167m in single-crystalline hexagonal ZnO was studied by
means of the emission channeling technique. Following 60-keV, room-temperature …
means of the emission channeling technique. Following 60-keV, room-temperature …
Spectroscopic properties of Sm3+ (4f 5) in GaN
JB Gruber, B Zandi, HJ Lozykowski… - Journal of applied …, 2002 - pubs.aip.org
We have analyzed the cathodoluminescence spectra of Sm3 ions implanted and annealed
in GaN epilayers. High-resolution emission spectra were obtained at 11 K between 350 and …
in GaN epilayers. High-resolution emission spectra were obtained at 11 K between 350 and …
Crystal field analysis of rare-earth ions energy levels in GaN
Much effort has been put to achieve optoelectronic devices based on Er doped GaN,
operating on the intra-4f-shell transitions of erbium. The key issue for good understanding of …
operating on the intra-4f-shell transitions of erbium. The key issue for good understanding of …
Spectroscopic analysis of Eu3+ in single-crystal hexagonal phase AlN
A detailed spectroscopic analysis of the crystal-field splitting of the energy levels of Eu 3+(4f
6) in single crystals of hexagonal phase aluminum nitride is reported based on assignments …
6) in single crystals of hexagonal phase aluminum nitride is reported based on assignments …
Structure and Cathodoluminescence Properties in Tb3+ and Eu3+ Doped AlN Films
X Luo, X Wang, H Meng, H Chen, X Zeng… - … status solidi (a), 2024 - Wiley Online Library
For the first time, Tb3+ and Eu3+ co‐doped AlN films were prepared using ion implantation,
and the crystal structure and cathodoluminescence (CL) properties of films were …
and the crystal structure and cathodoluminescence (CL) properties of films were …
Spectra and energy levels of in AlN
We report crystal-field splitting investigations of Gd 3+(4 f 7) energy levels determined from
high resolution energy (Stark) level cathodoluminescence (CL) spectroscopy of Gd …
high resolution energy (Stark) level cathodoluminescence (CL) spectroscopy of Gd …
Spectra and energy levels of in AlN
We report a detailed analysis of the cathodoluminescence spectra of Tm 3+-implanted 2H-
aluminum nitride (AlN) covering the wavelength range between 290 and 820 nm at …
aluminum nitride (AlN) covering the wavelength range between 290 and 820 nm at …