In this study, the effect of thermal cycling on defect generation, microstructure, and RF signal
integrity of blind Cu through-silicon vias (TSVs) were investigated. Three different thermal …

Through Silicon Vias (TSVs) are critical elements in three dimensional integrated circuits (3-
D ICs) and are susceptible to undergo defects at different stages: during their own …

A defect detection method for a 3D chip and a system using the same are provided. The
method includes: generating a plurality of physical models having a defect of at least one …

Through-silicon vias (TSVs) technology has attracted industry interest as a way to achieve
high bandwidth, and short interconnect delays in nanometer three-dimensional integrated …

Due to a lot of thermal and mechanical loads during TSV process or post TSV process such
as metallization and die stacking, disconnection failure can occur which results in 3D IC …

We develop an empirical model for measured frequency-dependent insertion loss (). The
model parameters are determined with a stochastic optimization implementation of the …

Through Silicon VIAs (TSVs) are critical elements in three dimensional integrated circuits
(3D ICs). Various defects may occur during their fabrication process, the bonding stage or …

The trend in semiconductor industry is rapidly shifting from 2-dimension to 3-dimension to
satisfy the ever-growing demand on the miniaturization of electronic devices. The …

Through Silicon Vias (TSVs) are crucial elements for the reliable operation and the yield of
three dimensional integrated circuits (3D ICs). Resistive open defects are a serious concern …

During the 3-D ICs manufacturing process, TSVs are susceptible to undergo different faults.
Among these faults, the leakage fault is one of the most common cases. In this paper, a new …