In anisotropic etching of the substrates, ultra-thin and conformable layers of materials can be
used to passivate sidewalls of the etched features. Such a sidewall passivation layer may be …

Methods of forming metal oxide structures and methods of forming metal oxide patterns on a
substrate using a block copolymer system formulated for self-assembly. The metal oxide …

US8999492B2 - Method to produce nanometer-sized features with directed assembly of block
copolymers - Google Patents US8999492B2 - Method to produce nanometer-sized features with …

US10225906B2 - Light emitting device including semiconductor nanocrystals - Google Patents
US10225906B2 - Light emitting device including semiconductor nanocrystals - Google Patents …

Multi-layer antireflection coatings, devices including multi-layer antireflection coatings and
methods of forming the same are disclosed. A block copolymer is applied to a substrate and …

5,510,323 A 4, 1996 Kamo et al. 6,884,527 B2 4/2005 Groves et al. 5,543,630 A 8, 1996
Bliss et al. 6,890.369 B2 5/2005 Goyal et al. 5,650,378 A 7/1997 Iijima et al. 6,899.928 B1 …

A method of patterning a substrate is disclosed. An ink material is chemisorbed to at least
one region of a stamp and the chemisorbed ink material is transferred to a receptor …

A method for aligning a disk with an imprinting surface is described. In one embodiment, the
method includes passively aligning an imprinting surface with the disk and imprinting the …

A method of using a contact printing stamp, including forming a transfer material on a
plurality of stamping surfaces. The plurality of stamping surfaces are disposed on a plurality …

US8557128B2 - Sub-10 nm line features via rapid graphoepitaxial self-assembly of amphiphilic
monolayers - Google Patents US8557128B2 - Sub-10 nm line features via rapid graphoepitaxial …