We have studied the origin of photoluminescence (PL) from hydrogenated nanocrystalline
silicon (nc-Si: H) films produced by a plasma-enhanced chemical vapor deposition …

We introduce a simple route towards hierarchical TiO2 nanopatterns using a block-
copolymer template approach combined with a dip-coating process and soft inorganic …

We report on integration of double nanocrystalline silicon quantum dots (nc-Si QDs) of
approximately 10 nm in diameter onto the multiple-gate single-electron transistor (SET) used …

We describe the natural oxidation of silicon nanocrystals (SiNCs) and the method of etching
the natural oxide layer of SiNC with hydrogen fluoride (HF) vapor. Electrical measurements …

We report on a new bottom-up technique for forming silicon nanostructures based on the
assembly of nanocrystalline Si (nc-Si) dots by the Langmuir–Blodgett technique. nc-Si dots …

InAs and GaSb nanowires oriented along different crystallographic axes—the [001],[101]
and [111] directions of zinc-blende structure—have been studied utilizing a first-principles …

An assembly of nanoparticles using a colloidal solution is promising for the fabrication of
future highly integrated electron and photoelectronic devices because of low manufacturing …

Coupled quantum dots are of great interest for the application of quantum computing. The
aspect needing attention is the preparation of well-defined quantum dots with small sizes …

As CMOS device scaling approaches to sub 10-nm node, quantum size effects become
significant even at room temperature. Recent progress in the fabrication technology of …

We have demonstrated self-assembling formation of one-dimensionally self-aligned Si-
based quantum dots (QDs) structures and applied them to an active layer of light emitting …