Solution-processed yttrium-doped IZTO semiconductors for high-stability thin film transistor applications
In this article, solution-processed zinc-tin-oxide (ZTO), indium-zinc-tin-oxide (IZTO), and
yttrium-doped indium-zinc-tin-oxide (IZTO: Y) thin film transistors (TFTs) were investigated …
yttrium-doped indium-zinc-tin-oxide (IZTO: Y) thin film transistors (TFTs) were investigated …
Low-Voltage, Flexible InGaZnO Thin-Film Transistors Gated With Solution-Processed, Ultra-Thin AlxOy
Indium-gallium-zinc-oxide thin-film transistors gated with solution-processed, ultra-thin Al x
O y have been fabricated on a plastic substrate. The effects of bending on the gate dielectric …
O y have been fabricated on a plastic substrate. The effects of bending on the gate dielectric …
Mechanism of Extraordinary High Mobility in Multilayered Amorphous Oxide Thin Film Transistor
JY Lee, SY Lee - IEEE Transactions on Electron Devices, 2021 - ieeexplore.ieee.org
Amorphous oxide-based thin-film transistors (TFTs) have been applied to display and
various next-generation applications. The amorphous oxide thin film has exhibited a higher …
various next-generation applications. The amorphous oxide thin film has exhibited a higher …
Improved reliability of a-IGZO thin-film transistor under positive gate bias stress by utilizing NH3 plasma treatment
W Wu, W Xu, H Tian, G Yang, Z Yu, T Huang… - Microelectronics …, 2023 - Elsevier
In this paper, the degradation mechanisms of the bottom-gate amorphous InGaZnO thin film
transistors (a-IGZO TFTs) under positive gate bias stress (PBS) are investigated. The PBS …
transistors (a-IGZO TFTs) under positive gate bias stress (PBS) are investigated. The PBS …
[HTML][HTML] Rapid thermal annealing effect on performance variations of solution processed indium–gallium–zinc-oxide thin-film transistors
S Kil, J Jeong - AIP Advances, 2023 - pubs.aip.org
In this paper, the 1 min annealing effect on the electrical characteristics of solution-
processed amorphous indium–gallium–zinc-oxide thin-film transistors (a-IGZO TFTs) was …
processed amorphous indium–gallium–zinc-oxide thin-film transistors (a-IGZO TFTs) was …
Impact of channel thickness on device scaling in vertical InGaZnO channel charge-trap memory transistors with ALD Al2O3 tunneling layer
YJ Cho, YH Kwon, NJ Seong, KJ Choi… - Materials Science in …, 2024 - Elsevier
This study investigates the impact of channel thickness (T CH) variation on memory
performance and its physical origins in vertical channel charge trap memory (V-CTM) using …
performance and its physical origins in vertical channel charge trap memory (V-CTM) using …
Understanding thickness-dependent stability of tungsten-doped indium oxide transistors
H Kim, HS Choi, G Yun, WJ Cho, H Park - Applied Physics Letters, 2024 - pubs.aip.org
In this study, the influence of the thickness of the channel layer on the electrical properties
and stability of tungsten-doped indium oxide (IWO) thin-film transistors (TFTs) was …
and stability of tungsten-doped indium oxide (IWO) thin-film transistors (TFTs) was …
Effect of gate insulator thickness on device performance of InGaZnO thin-film transistors
X Ding, J Zhang, W Shi, H Ding, H Zhang, J Li… - Materials Science in …, 2015 - Elsevier
Top-contact thin-film transistors (TFTs) are fabricated in this work using atomic layer
deposition (ALD) Al 2 O 3 as the gate insulator and radio frequency sputtering InGaZnO …
deposition (ALD) Al 2 O 3 as the gate insulator and radio frequency sputtering InGaZnO …
ZrO2 insulator modified by a thin Al2O3 film to enhance the performance of InGaZnO thin-film transistor
X Ding, J Zhang, H Zhang, H Ding, C Huang, J Li… - Microelectronics …, 2014 - Elsevier
A high-performance InGaZnO (IGZO) thin-film transistor (TFT) with ZrO 2–Al 2 O 3 bilayer
gate insulator is fabricated. Compared to IGZO-TFT with ZrO 2 single gate insulator, its …
gate insulator is fabricated. Compared to IGZO-TFT with ZrO 2 single gate insulator, its …
Effect of active layer thickness variation on scaling response in a-IGZO thin film transistors under Schottky limited operation
RB Raj, AK Tripathi, PK Mahato, S Nair… - Semiconductor …, 2021 - iopscience.iop.org
Active layer thickness variation in highly-doped amorphous indium-gallium-zinc oxide thin
film transistors with molybdenum-chromium contacts is studied to reveal parametric …
film transistors with molybdenum-chromium contacts is studied to reveal parametric …