Modelling and simulation of FinFET circuits with predictive technology models
RS Kushwah, M Chauhan, P Shrivastava… - Radioelectronics and …, 2014 - Springer
During analysis of complexities of the Metal Oxide Semiconductor Field Effect Transistors
(MOSFET) technology to obtain the adequate gate control above the channel, FinFET …
(MOSFET) technology to obtain the adequate gate control above the channel, FinFET …
[PDF][PDF] Threshold Voltage Control through Multiple Supply for Low Power IG-FinFET Circuit
P Shrivastava, S Khandelwal… - International Journal of …, 2013 - researchgate.net
As scale down the standard single-gate bulk MOSFET dimensions, vast challenges in the
nanometer regime due to the brutal short-channel effects arises that grounds an exponential …
nanometer regime due to the brutal short-channel effects arises that grounds an exponential …
[PDF][PDF] Deep Submicron 50nm CMOS Logic Design With FINFET
PC Rajashree, A Thomas, R Jaria, J Precilla… - International Journal of … - academia.edu
As the deep submicron technology is introduced, it fulfills the need of increase in speed and
efficiency by using transistors of smaller size with faster switching rates. The shrink in the …
efficiency by using transistors of smaller size with faster switching rates. The shrink in the …