Recent progress in ab initio simulations of hafnia-based gate stacks
The continuous size downscaling of complementary metal–oxide–semiconductor (CMOS)
transistors has led to the replacement of SiO 2 with a HfO 2-based high dielectric constant …
transistors has led to the replacement of SiO 2 with a HfO 2-based high dielectric constant …
Recent applications of hard x-ray photoelectron spectroscopy
Recent applications of hard x-ray photoelectron spectroscopy (HAXPES) demonstrate its
many capabilities in addition to several of its limitations. Examples are given, including …
many capabilities in addition to several of its limitations. Examples are given, including …
Performance calculations of the X-ray powder diffraction beamline at NSLS-II
The X-ray Powder Diffraction (XPD) beamline at the National Synchrotron Light Source II is a
multi-purpose high-energy X-ray diffraction beamline with high throughput and high …
multi-purpose high-energy X-ray diffraction beamline with high throughput and high …
Charging phenomena in dielectric/semiconductor heterostructures during x-ray photoelectron spectroscopy measurements
The determination of the valence band offset (VBO) by x-ray photoelectron spectroscopy
(XPS) is commonly performed using the so-called Kraut's method that was developed for …
(XPS) is commonly performed using the so-called Kraut's method that was developed for …
Effect of Surface Passivation on Photoelectrochemical Water Splitting Performance of WO3 Vertical Plate-Like Films
WO3 vertical plate-like arrays provide a direct pathway for charge transport, and thus hold
great potential as working electrodes for photoelectrochemical (PEC) water splitting …
great potential as working electrodes for photoelectrochemical (PEC) water splitting …
Multi-technique x-ray and optical characterization of crystalline phase, texture, and electronic structure of atomic layer deposited Hf1− xZrxO2 gate dielectrics …
A multi-technique approach was used to determine the crystalline phase, texture, and
electronic structure of Hf 1− x Zr x O 2 (x= 0–1) high-k gate dielectric thin films grown by …
electronic structure of Hf 1− x Zr x O 2 (x= 0–1) high-k gate dielectric thin films grown by …
Annealing dependence of diamond-metal Schottky barrier heights probed by hard x-ray photoelectron spectroscopy
Hard x-ray photoelectron spectroscopy was applied to investigate the diamond-metal
Schottky barrier heights for several metals and diamond surface terminations. The position …
Schottky barrier heights for several metals and diamond surface terminations. The position …
NIST high throughput variable kinetic energy hard X-ray photoelectron spectroscopy facility
We present an overview of the National Institute of Standards and Technology beamline
X24A at the National Synchrotron Light Source at Brookhaven National Lab and recent work …
X24A at the National Synchrotron Light Source at Brookhaven National Lab and recent work …
Hard x-ray photoelectron spectroscopy and electrical characterization study of the surface potential in metal/AlO/GaAs(100) metal-oxide-semiconductor structures
Hard x-ray photoelectron spectroscopy (HAXPES) has been used to study metal-oxide-
semiconductor (MOS) structures fabricated with both high (Ni) and low (Al) work-function …
semiconductor (MOS) structures fabricated with both high (Ni) and low (Al) work-function …
Band alignment in Ge/GeOx/HfO2/TiO2 heterojunctions as measured by hard x-ray photoelectron spectroscopy
We investigate the interlayer (IL) thickness dependence of band offsets in a germanium
based bilayer metal-oxide-semiconductor sandwich with an amorphous plasma enhanced …
based bilayer metal-oxide-semiconductor sandwich with an amorphous plasma enhanced …