Bulk unrelaxed InAsSb alloys with Sb compositions up to 65% were grown on
compositionally graded GaInSb and AlInSb buffers on GaSb substrates by molecular beam …

InAs 1–x Sb x has the smallest bandgap of conventional III-V ternary alloys and thus has
been of scientific interest for mid-wavelength (MWIR, 3–5 μm) and long-wavelength (8–12 …

We report on the growth of near-minimum bandgap (0.1 eV) bulk InAs 0.54 Sb 0.46 on GaAs
with pronounced photoluminescence. Combining strain-mediating techniques effectively …

The influence of dopant concentration on both in-plane mobility and minority carrier lifetime
in long-wave infrared InAs/InAsSb superlattices (SLs) was investigated. Unintentially doped …

Virtual substrates with lattice constants in the range mid-way between InAs and InSb have
been developed using molecular beam epitaxy (MBE). The III–V alloys in this range are of …

InAsSb is the only direct-bandgap III–V compound semiconductor alloy that absorbs and
emits light over the entire long-wavelength infrared band (8–12 micron). We measured its …

The design and fabrication of metamorphic periodic heterostructures containing InAsSb
layers with controllable modulated Sb composition and well‐regulated band alignments are …

InAs 1-x Sb x is a unique semiconductor as it possesses the lowest bandgap (E g) of the
conventional III–V materials, yielding emission out to nearly 15 μm at room temperature. As …

A strong dependence of the InAsSb composition on the group III flux during molecular beam
epitaxy growth has been observed and quantified. Analogous to group III alloying, the Sb …

The analysis of forward-bias tunneling data to determine the energy position of a deep level
in the gallium-free InAs/InAsSb superlattice is reported. The level is found in p–n junction …