Physics of direct bonding: Applications to 3D heterogeneous or monolithic integration

P Gueguen, C Ventosa, L Di Cioccio… - Microelectronic …, 2010 - Elsevier
Direct wafer bonding and thinning technologies are now extensively used in combination to
produce SOI wafers (silicon-on-insulators) or innovative engineered substrates. Emerging …

Fabrication and operation of a two-dimensional ion-trap lattice on a high-voltage microchip

RC Sterling, H Rattanasonti, S Weidt, K Lake… - Nature …, 2014 - nature.com
Microfabricated ion traps are a major advancement towards scalable quantum computing
with trapped ions. The development of more versatile ion-trap designs, in which tailored …

Characterization of biological thin films at the solid-liquid interface by X-ray reflectivity

CE Miller, J Majewski, T Gog, TL Kuhl - Physical review letters, 2005 - APS
We demonstrate that 18 keV x rays can be used to study organic thin films at the solid-liquid
interface by x-ray reflectivity. We establish that this is a powerful technique for investigating …

Hydrophilic low-temperature direct wafer bonding

C Ventosa, F Rieutord, L Libralesso… - Journal of Applied …, 2008 - pubs.aip.org
The sealing mechanism of silicon bonding interfaces is reported as a function of annealing
temperature. Details of the structural and chemical interface evolution are obtained for …

A new X-ray transmission-reflection scheme for the study of deeply buried interfaces using high-energy microbeams

H Reichert, V Honkimäki, A Snigirev… - Physica B: Condensed …, 2003 - Elsevier
We present a new experimental scheme for the high-resolution X-ray study of deeply buried
interfaces, as they occur in novel functional nanomaterials and in nature. Our experimental …

Mechanism of thermal silicon oxide direct wafer bonding

C Ventosa, C Morales, L Libralesso… - … and Solid-State …, 2009 - iopscience.iop.org
Thermal silicon oxide-to-oxide bonding was investigated at the nanometer level using X-ray
reflectivity, transmission electron microscopy, and infrared absorption spectroscopy. The …

Low temperature direct bonding: An attractive technique for heterostructures build-up

H Moriceau, F Rieutord, F Fournel, L Di Cioccio… - Microelectronics …, 2012 - Elsevier
Low temperature direct bonding has been used extensively for assembling materials or
components in the microelectronics and microsystem industries. We review here some key …

Asymmetric Proton-Exchange-Enhanced Lithium Niobate and Silicon Low-Temperature Direct Bonding with an Ultrathin Heterogeneous Interface

Y Du, Y Zou, B Zhu, H Jiang, Y Chai… - … Applied Materials & …, 2024 - ACS Publications
The integration of lithium niobate (LiNbO3 or LN) and silicon (Si) has emerged as a
promising heterogeneous platform for microelectromechanical systems (MEMSs) and …

A model of interface defect formation in silicon wafer bonding

S Vincent, I Radu, D Landru, F Letertre… - Applied Physics …, 2009 - pubs.aip.org
A model of the defect formation at the bonding interface upon annealing in silicon wafer
bonding is proposed in this paper. It is shown that the formation of the bonding defects …

High energy surface x-ray diffraction applied to model catalyst surfaces at work

U Hejral, M Shipilin, J Gustafson, A Stierle… - Journal of Physics …, 2020 - iopscience.iop.org
Catalysts are materials that accelerate the rate of a desired chemical reaction. As such, they
constitute an integral part in many applications ranging from the production of fine chemicals …