Toward Ga‐Free Wavelength Extended 2.6 µm InAsP Photodetectors with High Performance
Short‐wavelength infrared (SWIR) photodetectors are of great interest owing to their unique
advantages of SWIR imaging such as better penetration ability and improved sensitivity that …
advantages of SWIR imaging such as better penetration ability and improved sensitivity that …
Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy
The growth of InGaAs quantum wells (QWs) epitaxially on InP substrates is of great interest
due to their wide application in optoelectronic devices. However, conventional molecular …
due to their wide application in optoelectronic devices. However, conventional molecular …
Upconverting Near‐Infrared Light Detection in Lead Halide Perovskite with Core–Shell Lanthanide Nanoparticles
A Ishii, T Miyasaka - Advanced Photonics Research, 2023 - Wiley Online Library
Light detection in the near‐infrared (NIR) region is necessary in a wide range of optical
applications, such as optical communication, medical diagnostics, and environmental …
applications, such as optical communication, medical diagnostics, and environmental …
Improving of sensitivity of PbS quantum dot based SWIR photodetector using P3HT
In this study, we improved the photosensitivity of the lead sulfide quantum dot (PbS QD)-
based shortwave infrared (SWIR: 1.0–2.5 μm) photodetector by blending poly (3 …
based shortwave infrared (SWIR: 1.0–2.5 μm) photodetector by blending poly (3 …