The corrosion behavior of the FeCrAl coating with different Cr and Al contents before and
after Au-ions irradiation was investigated in static LBE. The grain of the irradiated coating …

A comprehensive study of displacement damage and total ionisation dose effects on 4H‐
silicon carbide power devices is presented. Power diodes and transistors produced by …

The different effect of displacement damage produced by neutron irradiation on the static
characteristics of 4.5-kV silicon and 4H silicon carbide (SiC) pin power diodes is explained …

Silicon carbide (SiC) is a wide bandgap semiconductor with outstanding properties that
make it especially appropriate for radiation monitoring in radiation harsh environments and …

Chemical vapor deposited polycrystalline SiC was irradiated with neutrons in a thermal
reactor at nominal 550℃ to 2× 10 19 n/cm 2 (E> 0.1 MeV). Isochronal annealing of the …

The microstructure and LBE corrosion behavior of the irradiated (up to 110 dpa)
Fe15Cr11Al0. 5Y coatings were investigated. The surface roughness and hardness …

The spectroscopic performances of Schottky barrier diodes (SBDs) and bulk detectors
fabricated on n-type epitaxial 4H-SiC and high-purity semi-insulating (HPSI) 4H-SiC …

The effect of super-cadmium neutron-induced defects on radiation detection performance of
Schottky barrier diodes, fabricated on 250--thick 4H-SiC epitaxial layers with ultralow …

Silicon carbide (SiC) devices have shown substantial promise in realizing ultrahigh-voltage
and high power, and have been usually considered as a potential candidate for high …

In this work, we obtained the Si vacancy generation rates η in SiC nanowire samples
irradiated with 1, 3 MeV protons, and 2.8 MeV helium ions using the electrical resistivity …