Metallization considerations for carbon nanotube device optimization

DB Farmer - Journal of Applied Physics, 2022 - pubs.aip.org
As a one-dimensional structure with atomically thin sidewalls, charge transport in carbon
nanotubes can be regarded as a surface phenomenon. As such, perturbations from the …

Influences of Sr-90 beta-ray irradiation on electrical characteristics of carbon nanoparticles

H Kasani, M Taghi Ahmadi, R Khoda-Bakhsh… - Journal of Applied …, 2016 - pubs.aip.org
This work is concerned with the low cost fabrication of carbon nanoparticles (CNPs), and its
application to beta ray detection. The structural and morphological properties of the CNPs …

Carbon nanotube field-effect transistor with sidewall-protected metal contacts

SJ Han, J Tang - US Patent 9,577,204, 2017 - Google Patents
SUMMARY A field effect transistor includes a Substrate and a gate dielectric formed on the
substrate. A channel material is formed on the dielectric layer. The channel material includes …

Synthesis and multiferroic properties of BiFeO3 nanotubes

W Jing, L Mei-Ya, L Xiao-Lian, P Ling, L Jun… - Chinese Physics …, 2009 - iopscience.iop.org
Highly ordered BiFeO 3 (BFO) nanotubes with about 200 nm in diameter and 60 μm in
length are fabricated by a sol-gel AAO template method. A perovskite-type structure of BFO …

Molecular dynamics simulation of carbon nanotubes under elevated temperatures

S Ebrahimi‐Nejad, A Shokuhfar… - Materialwissenschaft …, 2010 - Wiley Online Library
The mechanical characteristics of high‐strength materials or nanodevices made with carbon
nanotubes (CNTs) depend on the intrinsic properties of the CNT building blocks. In this …

Layered Transition Metal Electride Hf2Se with Coexisting Two-Dimensional Anionic d-Electrons and Hf–Hf Metallic Bonds

X Wang, X Qiu, C Sun, X Cao, Y Yuan… - Chinese Physics …, 2021 - iopscience.iop.org
Electrides are unique materials, whose anionic electrons are confined to interstitial voids,
and they have broad potential applications in various areas. In contrast to the majority of …

Impacts of image force on the Schottky barrier height at metal-carbon nanotube contacts

G Zhang, Q Shi - Applied Physics Letters, 2012 - pubs.aip.org
By using first-principles calculations and classical image force model, we studied the image
force induced Schottky barrier (SB) height reduction in carbon nanotube (CNT)-metal …

Carbon nanotube field-effect transistor with sidewall-protected metal contacts

SJ Han, J Tang - US Patent 10,367,158, 2019 - Google Patents
A field effect transistor includes a substrate and a gate dielectric formed on the substrate. A
channel material is formed on the dielectric layer. The channel material includes carbon …

Carbon nanotube field-effect transistor with sidewall-protected metal contacts

SJ Han, J Tang - US Patent 9,972,800, 2018 - Google Patents
A field effect transistor includes a substrate and a gate dielectric formed on the substrate. A
channel material is formed on the dielectric layer. The channel material includes carbon …

Gap states controlled transmission through 1D metal-nanotube junctions

UN Nandi, AK Dey, D Talukdar - Carbon, 2019 - Elsevier
Understanding the nature of Schottky Barrier (SB) formed at the metal/1D-semiconductor
interface is a scientific challenge for realizing high performance transistors. In this report, we …