Generally, waste heat is redundantly released into the surrounding by anthropogenic
activities without strategized planning. Consequently, urban heat islands and global …

GaSb was grown epitaxially on semi-insulating GaAs (001) substrates using molecular
beam epitaxy. The effect of varying ion energy and fluence of Si ion implantation on the …

Arsenic's high vapor pressure leads to thermal instability during high-temperature
processing (> 370 C) of GaAs, contributing to the performance degradation of subsequently …

With growing interest in multi source energy harvesting including integrated microchips we
propose a comparison of radio frequency (RF) and solar energy sources in a typical city …

Ion implantation induced damage in GaSb and its removal by rapid thermal annealing (RTA)
have been investigated by Raman spectroscopy. The evolution of the Raman modes as a …

Ion implantation has been studied relatively little as a nonepitaxial doping method for GaSb
due in part to anomalous swelling that occurs at high doses. Aside from beryllium (Be+) …

InGaAsSb and GaSb thermophotovoltaic cells were grown lattice-matched to GaSb
substrates epitaxially by the Molecular Beam Epitaxy (MBE) method and fabricated non …

GaSb thermophotovoltaic cells fabricated using Molecular Beam Epitaxy (MBE) and ion
implantation techniques are studied. Challenges including different defect formation …

Thin-film GaSb diodes were fabricated and investigated for room-temperature radiation
detection. GaSb PN junction-based detectors were fabricated by use of both ion …

Theoretical predictions for AlSb material properties have not been realized using bulk
growth methods. This research was motivated by advances in molecular beam epitaxial …