Recent progress in ab initio simulations of hafnia-based gate stacks
The continuous size downscaling of complementary metal–oxide–semiconductor (CMOS)
transistors has led to the replacement of SiO 2 with a HfO 2-based high dielectric constant …
transistors has led to the replacement of SiO 2 with a HfO 2-based high dielectric constant …
Effective work function of Pt, Pd, and Re on atomic layer deposited HfO2
Platinum and Pd show a significant difference in work function on Si O 2 and high-K
materials (Hf O 2). The effective metal work functions for Pd, Pt, and Re on atomic layer …
materials (Hf O 2). The effective metal work functions for Pd, Pt, and Re on atomic layer …
Design and performance analysis of cylindrical surrounding double-gate MOSFET for RF switch
VM Srivastava, KS Yadav, G Singh - Microelectronics Journal, 2011 - Elsevier
In this paper, we have analyzed the design parameters of Cylindrical Surrounding Double-
Gate (CSDG) MOSFETs as an RF switch for the advanced wireless telecommunication …
Gate (CSDG) MOSFETs as an RF switch for the advanced wireless telecommunication …
Work Function and Band Alignment of Electrode Materials
M Yoshitake - National Institute for Materials Science, Japan, 2021 - Springer
Work function is one of the important physical quantities of materials that is related to various
phenomena. However, systematic discussion on the work function is limited possibly …
phenomena. However, systematic discussion on the work function is limited possibly …
Efficient TADF-based blue OLEDs with 100% stretchability using titanium particle-embedded indium zinc oxide mesh electrodes
A highly stretchable and transparent electrode is a key element for realizing stretchable
organic light-emitting diodes (SOLEDs). To date, several reports have been made on this …
organic light-emitting diodes (SOLEDs). To date, several reports have been made on this …
[HTML][HTML] Control of Schottky barrier height in metal/β-Ga2O3 junctions by insertion of PdCoO2 layers
T Harada, A Tsukazaki - APL Materials, 2020 - pubs.aip.org
Control of Schottky barrier heights (SBHs) at metal/semiconductor interfaces is a critically
important technique to design switching properties of semiconductor devices. In this study …
important technique to design switching properties of semiconductor devices. In this study …
Enhancement of voltage controlled magnetic anisotropy (VCMA) through electron depletion
Recent advancement in the switching of perpendicular magnetic tunnel junctions with an
electric field has been a milestone for realizing ultra-low energy memory and computing …
electric field has been a milestone for realizing ultra-low energy memory and computing …
Atomic layer annealing for modulation of the work function of TiN metal gate for n-type MOS devices
CY Wang, CY Chou, HF Shiue, HY Chen, CH Ling… - Applied Surface …, 2022 - Elsevier
Tailoring the work function of metal gates at a low temperature is critical to the electronic
performance of advanced nanoscale MOSFET devices. In this paper, the work function of …
performance of advanced nanoscale MOSFET devices. In this paper, the work function of …
Emulating Artificial Synaptic Plasticity Characteristics from SiO2-Based Conductive Bridge Memories with Pt Nanoparticles
P Bousoulas, C Papakonstantinopoulos, S Kitsios… - Micromachines, 2021 - mdpi.com
The quick growth of information technology has necessitated the need for developing novel
electronic devices capable of performing novel neuromorphic computations with low power …
electronic devices capable of performing novel neuromorphic computations with low power …
Memory cell provided with dual-gate transistors, with independent asymmetric gates
The invention concerns a random access memory cell com prising: at least one first plurality
of symmetrical dual-gate transis tors (TL1, TL1, TD1, TD1, TL2, TL2) forming a flip-flop, at …
of symmetrical dual-gate transis tors (TL1, TL1, TD1, TD1, TL2, TL2) forming a flip-flop, at …