The solid phase crystallization of chemical vapor deposited amorphous silicon films onto
oxidized silicon wafers, induced either by thermal annealing or by ion beam irradiation at …

The ion-beam-induced epitaxial crystallization (IBIEC) and planar amorphization of
amorphous Si (a-Si) layers onto single-crystal Si substrates is reviewed. In particular, the …

Ion-beam-induced amorphization in Si has attracted significant interest since the beginning
of the use of ion implantation for the fabrication of Si devices. A number of theoretical …

An energetic electron beam has been used to stimulate crystallization of spatially isolated
amorphous regions in Si, Ge, GaP, and GaAs at 30 and 300 K. In the four materials it was …

Abstract Bombardment with 0.6-3-MeV Ne+ ions has been employed to stimulate solid-
phase epitaxial growth of amorphous silicon at temperatures 200-500 C. Two distinctly …

The effects of hydrostatic pressure on the solid-phase epitaxial growth (SPEG) rate u of
intrinsic Ge (100) and undoped and doped Si (100) into their respective self-implanted …

Systematic investigations of electronic energy loss (S e) effects on pre-existing defects in
crystalline silicon (Si) are crucial to provide reliance on the use of ionizing irradiation to …

Silicon carbide single crystals were irradiated at room temperature with low energy I ions
and high energy Pb ions. It is found that the damaged layer formed by the elastic collisions …

Extensive experimental investigations have been reported on the ion-induced motion of the
interface between the crystalline and amorphous phases of silicon. The crystal grows into …

57 ABSTRACT 3,309,586 3/1967 Kleinknecht........ 317/235 3,492,511 1/1970 Crawford........
307/304 An integrated circuit comprising an insulating SubStrate; a 4037140 7/1977 Eaton …