To meet the requirement of big data era and neuromorphic computations, nonvolatile
memory with fast speed, high density, and low power consumption is urgently needed. As an …

The rapid development of Internet of Things devices requires real time processing of a huge
amount of digital data, creating a new demand for computing technology. Phase change …

The burgeoning of artificial intelligence has brought great convenience to people's lives as
large-scale computational models have emerged. Artificial intelligence-related applications …

Abstract The Ge2Sb2Te5 alloy has served as the core material in phase-change memories
with high switching speed and persistent storage capability at room temperature. However …

Disorder-induced electron localization and metal-insulator transitions (MITs) have been a
very active research field starting from the seminal paper by Anderson half a century ago …

Non-volatile storage memory is widely considered to be one of the most promising
candidates to replace dynamic random access memory and even static random access …

The amorphous to crystalline phase transformation of Ge2Sb2Te5 (GST) films by UV
nanosecond (ns) and femtosecond (fs) single laser pulse irradiation at the same wavelength …

Abstract Ge-Sb-Te (GST) thin films are emerging materials for various non-volatile memory
applications. The compounds contain a huge number of vacancies that play important roles …

Phase-change materials based on GeSbTe show unique switchable optoelectronic
properties and are an important contender for next-generation non-volatile memories …

In this work, the local structure of metastable Ge 2 Sb 2 Te 5 (GST) phase change thin films
crystallised by laser irradiation of amorphous GST films is studied by state-of-the-art …