Inverse-design laser-infrared compatible stealth with thermal management enabled by wavelength-selective thermal emitter

G Xu, Q Kang, X Zhang, W Wang, K Guo… - Applied Thermal …, 2024 - Elsevier
With the fast development of multi-band detection technology, the demand for multi-band
stealth technology with thermal management in military and civilian fields is increasing …

Optical power-handling capabilities and temporal dynamics of reconfigurable phase-change metasurfaces

G Braid, C Ruiz de Galarreta, J Pady, A Comley… - Optics …, 2024 - opg.optica.org
Metasurfaces based on chalcogenide phase-change materials offer a highly promising route
towards the realization of non-volatile reconfigurable metasurfaces. However, since their …

Stress Engineering: The Response of Phase Change Materials to Mechanical Stimuli

M Javanbakht, S Mohebbi… - ACS Applied Electronic …, 2023 - ACS Publications
The phase transition (PT) in phase change materials (PCMs) can be triggered by external
stimuli, eg, light or heat, resulting in a drastic change in their physical properties, such as …

Flexible Electronics Applications of Ge‐Rich and Se‐Substituted Phase‐Change Materials in Nonvolatile Memories

J Pady, J Costa, C Ramsdale, F Alkhalil… - physica status solidi …, 2024 - Wiley Online Library
Flexible electronics which are easy to manufacture and integrate into everyday items require
suitable memory technology that can function on flexible surfaces. Herein, the properties of …

Coupled mechano-electro-thermal model to predict phase transition in phase change materials

M Javanbakht, H Attariani - Computational Materials Science, 2024 - Elsevier
Abstract An advanced coupled Mechano-Electro-Thermal Phase Field model is presented to
capture the crystallization/amorphization of phase change nanofilm under external voltage. It …

Crystallization kinetics of Sb70Se30 thin films for phase change memories under the non-isothermal conditions

K Wang, L Chen - Journal of Crystal Growth, 2023 - Elsevier
We investigate the non-isothermal crystallization kinetics of Sb 70 Se 30 thin films using
differential scanning calorimetry and determine the kinetic triplet of Sb 70 Se 30 thin films at …

Observation and modelling of homogenous nucleation in Ge 2 Sb 2 Te 5 mushroom cells during SET operation

Y Yu, M Skowronski - Journal of Materials Chemistry C, 2023 - pubs.rsc.org
Phase change memory devices are used in applications for neuromorphic computing as
artificial synapses. However, the cycle-to-cycle variability of the partial SET operations, likely …

Phase field simulation of the void destabilization and splitting processes in interconnects under electromigration induced surface diffusion

J Zhang, P Huang - … and Simulation in Materials Science and …, 2021 - iopscience.iop.org
Interconnect lines of integrated circuits inevitably exist micro-damage, such as voids,
inclusions or cracks. Under the effect of different intrinsic physical mechanisms as well as …

Toward Memristive Phase‐Change Neural Network with High‐Quality Ultra‐Effective Highly‐Self‐Adjustable Online Learning

KG Lim, SX Go, CC Tan, Y Jiang, K Cai… - Advanced Physics …, 2024 - Wiley Online Library
Memristive hardware with reconfigurable conductance levels are leading candidates for
achieving artificial neural networks (ANNs). However, owing to difficulties in device …

Analysis of Intrinsic Variability in Phase-Change Memory Switching Originating from Stochastic Nucleation Using Fully Coupled Electrothermal and Phase-Field …

TTT Ho, H Lee, Y Kwon - ACS Applied Electronic Materials, 2023 - ACS Publications
The variability of nonvolatile memory becomes more important as memory capacity
increases. This is because, in general, individual device variability increases with scaling …