Currently, 3D integration is considered to be the most promising development direction
forchip industry. It relies on the through-silicon via (TSV) structure to achieve mechanical …

Porous nitride semiconductors are a fast-developing area of study, which open up a wide
range of new properties and applications, including strain free optical reflectors, chemical …

GaN/Si nanoheterostructures were prepared by depositing GaN nanograins on silicon
nanoporous pillar array (Si-NPA) with chemical vapor deposition method. Structural …

Here we report an environment-friendly approach to fabricate porous GaN photoelectrode
using ionic liquid as the etchant. SEM images revealed photo-assisted electrochemical …

A low-damaged wet process utilizing electrochemical (EC) etching and subsequent
chemical etching has been developed for the fabrication of GaN porous structures. Superior …

This work presents the role of graphene in improving the performance of a porous GaN-
based UV photodetector. The porous GaN-based photodetector, with a mean pore diameter …

Through‐silicon via (TSV) technology realizes high‐density interconnections within and
between different dies (chips) by vertically drilling holes in silicon and filling them with …

We investigated the correlation between structural and photoelectrochemical properties of
GaN porous nanostructures formed by photo-assisted electrochemical etching. The porous …

Porous n-type Si and porous p-type GaN nanostructures were fabricated using alternating
current photo-assisted electrochemical (ACPEC) etching in 1: 4 volume ratio of hydrofluoric …

Friction can be defined as the force resisting the relative motion between two surfaces.
These two surfaces can either be solid/liquid, solid/gas or liquid/gas. The frictional force is a …