A fringing field‐effect‐dependent MOSFET equivalent‐circuit model for its microwave
frequency applications has been developed. The thermal noise performance of the device …

An efficient, direct method to extract the admittance parameters and an accurate small‐
signal equivalent circuit model of an MOS transistor for RF applications have been …

Los avances en la tecnología de fabricación de transistores MOS para aplicaciones en
sistemas de comunicación en el rango de las micro-ondas, ha sido posible gracias al …

The operation of a previously proposed terahertz (THz) detector is formulated in detail. The
detector is based on the hot‐electron effect of the 2D electron gas (2DEG) in the quantum …

“Common sense is prejudice developed before the age of eighteen” were the words of
renowned scientist A. Einstein. The quote is in suitable place to begin the discussion on the …

Accurate modeling and efficient parameter extraction of the small signal equivalent circuit of
submicrometer MOSFET for high frequency operation are presented. The admittance …

Most of the material presented in this article is intended to improve the accuracy of the
microwave circuit performance prediction of MOSFET and to reduce the computer time …

In this paper, a small signal model of SOI MOSFET operating in the inversion region is
developed, taking into account the distributed nature of the gate structure. Because the width …