Floquet engineering of quantum materials

T Oka, S Kitamura - Annual Review of Condensed Matter …, 2019 - annualreviews.org
Floquet engineering, the control of quantum systems using periodic driving, is an old
concept in condensed matter physics dating back to ideas such as the inverse Faraday …

Nonequilibrium dynamical mean-field theory and its applications

H Aoki, N Tsuji, M Eckstein, M Kollar, T Oka… - Reviews of Modern …, 2014 - APS
The study of nonequilibrium phenomena in correlated lattice systems has developed into
one of the most active and exciting branches of condensed matter physics. This research …

Control of the metal–insulator transition in vanadium dioxide by modifying orbital occupancy

NB Aetukuri, AX Gray, M Drouard, M Cossale, L Gao… - Nature Physics, 2013 - nature.com
External control of the conductivity of correlated oxides is one of the most promising
schemes for realizing energy-efficient electronic devices. Vanadium dioxide (VO2), an …

Role of Thermal Heating on the Voltage Induced Insulator-Metal Transition in

A Zimmers, L Aigouy, M Mortier, A Sharoni, S Wang… - Physical review …, 2013 - APS
We show that the main mechanism for the dc voltage or dc current induced insulator-metal
transition in vanadium dioxide VO 2 is due to local Joule heating and not a purely electronic …

Mechanism and observation of Mott transition in VO2-based two-and three-terminal devices

HT Kim, BG Chae, DH Youn, SL Maeng… - New Journal of …, 2004 - iopscience.iop.org
Abstract When holes of about 0.018% are induced into a conduction band (breakdown of
critical on-site Coulomb energy), an abrupt first-order Mott metal–insulator transition (MIT) …

[HTML][HTML] Non-thermal resistive switching in Mott insulator nanowires

Y Kalcheim, A Camjayi, J Del Valle, P Salev… - Nature …, 2020 - nature.com
Resistive switching can be achieved in a Mott insulator by applying current/voltage, which
triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT …

Resistive switching in Mott insulators and correlated systems

E Janod, J Tranchant, B Corraze… - Advanced Functional …, 2015 - Wiley Online Library
Resistive random access memories (ReRAM) form an emerging type of non‐volatile
memories, based on an electrically driven resistive switching (RS) of an active material. This …

High-Order Harmonic Generation and Its Unconventional Scaling Law in the Mott-Insulating

K Uchida, G Mattoni, S Yonezawa, F Nakamura… - Physical Review Letters, 2022 - APS
Competition and cooperation among orders is at the heart of many-body physics in strongly
correlated materials and leads to their rich physical properties. It is crucial to investigate …

[HTML][HTML] Unconventional correlated insulator in CrOCl-interfaced Bernal bilayer graphene

K Yang, X Gao, Y Wang, T Zhang, Y Gao, X Lu… - Nature …, 2023 - nature.com
The realization of graphene gapped states with large on/off ratios over wide doping ranges
remains challenging. Here, we investigate heterostructures based on Bernal-stacked bilayer …

Nonequilibrium dynamical mean-field calculations based on the noncrossing approximation and its generalizations

M Eckstein, P Werner - Physical Review B—Condensed Matter and Materials …, 2010 - APS
We solve the impurity problem which arises within nonequilibrium dynamical mean-field
theory for the Hubbard model by means of a self-consistent perturbation expansion around …