Graphene strain-effect transistor with colossal on/off current ratio enabled by reversible nanocrack formation in metal electrodes on piezoelectric substrates
Extraordinarily high carrier mobility in graphene has led to many remarkable discoveries in
physics and at the same time invoked great interest in graphene-based electronic devices …
physics and at the same time invoked great interest in graphene-based electronic devices …
An Ultra-steep Slope Two-dimensional Strain Effect Transistor
We introduce a high-performance and ultra-steep slope switch, referred to as strain effect
transistor (SET), with a subthreshold swing< 0.68 mV/decade at room temperature for 7 …
transistor (SET), with a subthreshold swing< 0.68 mV/decade at room temperature for 7 …
2-D strain FET (2D-SFET) based SRAMs—Part I: Device-circuit interactions
In this article, we analyze the characteristicsof a recently conceived steep switching device 2-
D Strain FET (2D-SFET) and present its circuit implications in the context of 6T-SRAM. We …
D Strain FET (2D-SFET) and present its circuit implications in the context of 6T-SRAM. We …
Evaluation of Tradeoffs in the Design of FPGA Fabrics Using Electrostrictive 2-D FETs
S Baskaran, J Sampson - … on Very Large Scale Integration (VLSI …, 2021 - ieeexplore.ieee.org
The electrostrictive 2-D field-effect transistor (EFET) is a steep-slope device that promises to
offer aggressive length and voltage scalability. Two key features of this device are its high …
offer aggressive length and voltage scalability. Two key features of this device are its high …
Device Circuit Co-Design Utilizing Piezoelectric and Ferroelectric Materials
N Thakuria - 2022 - search.proquest.com
The needs of the semiconductor industry in this era are heavily data-driven. While the
processing demands have grown many folds due to the proliferation of data, the slow-down …
processing demands have grown many folds due to the proliferation of data, the slow-down …