Electrical reliability challenges of advanced low-k dielectrics
We review the latest studies that address the fundamental understanding of low-k dielectric
electrical properties and reliability. We focus on the results discussing the nature of process …
electrical properties and reliability. We focus on the results discussing the nature of process …
Copper metal for semiconductor interconnects
YL Cheng, CY Lee, YL Huang - Noble and Precious Metals …, 2018 - books.google.com
Resistance-capacitance (RC) delay produced by the interconnects limits the speed of the
integrated circuits from 0.25 mm technology node. Copper (Cu) had been used to replace …
integrated circuits from 0.25 mm technology node. Copper (Cu) had been used to replace …
Selective electroless deposition of cobalt using amino-terminated SAMs
I Zyulkov, S Armini, K Opsomer… - Journal of Materials …, 2019 - pubs.rsc.org
The continuation of CMOS scaling leads to the necessity of replacing Cu as an interconnect
material with a metal with lower resistivity and better reliability performance. At the same …
material with a metal with lower resistivity and better reliability performance. At the same …
On the use of (3-trimethoxysilylpropyl) diethylenetriamine self-assembled monolayers as seed layers for the growth of Mn based copper diffusion barrier layers
In this work x-ray photoelectron spectroscopy is used to investigate in-vacuo, the interaction
of metallic manganese with a (3-trimethoxysilylpropyl) diethylenetriamine (DETA) self …
of metallic manganese with a (3-trimethoxysilylpropyl) diethylenetriamine (DETA) self …
Surface modification of silicon oxycarbide films produced by remote hydrogen microwave plasma chemical vapour deposition from tetramethyldisiloxane precursor
P Uznanski, B Glebocki… - Surface and Coatings …, 2018 - Elsevier
The motivation for this contribution is the search for thin-film silicon oxycarbide (SiOC)
materials suitable for modern electronics with good chemical/thermal stability, good barrier …
materials suitable for modern electronics with good chemical/thermal stability, good barrier …
Surface sealing using self-assembled monolayers and its effect on metal diffusion in porous low-k dielectrics studied using monoenergetic positron beams
Surface sealing effects on the diffusion of metal atoms in porous organosilicate glass (OSG)
films were studied by monoenergetic positron beams. For a Cu (5 nm)/MnN (3 nm)/OSG …
films were studied by monoenergetic positron beams. For a Cu (5 nm)/MnN (3 nm)/OSG …
Non‐self‐sustained electron beam RF‐generated plasma in application for functional surface pretreatment
AP Palov, OV Proshina, TV Rakhimova… - Plasma Processes …, 2021 - Wiley Online Library
Simulation of non‐self‐sustained plasma generated by a 2‐keV electron beam in Ar with
radiofrequency (RF) biasing is carried out using a one‐dimensional particle‐in‐cell Monte …
radiofrequency (RF) biasing is carried out using a one‐dimensional particle‐in‐cell Monte …
Impact of Plasma Pretreatment and Pore Size on the Sealing of Ultra-Low-k Dielectrics by Self-Assembled Monolayers
Self-assembled monolayers (SAMs) from an 11-cyanoundecyltrichlorosilane (CN-SAM)
precursor were deposited on porous SiCOH low-k dielectrics with three different pore radii …
precursor were deposited on porous SiCOH low-k dielectrics with three different pore radii …
Helium electron beam rf plasma for low-k surface functionalization
EN Voronina, AA Sycheva, AA Solovykh… - Journal of Vacuum …, 2022 - pubs.aip.org
A complex simulation approach is applied to determine optimal conditions for the
functionalization of low-k materials in e-beam rf discharge generated by 1 keV electron …
functionalization of low-k materials in e-beam rf discharge generated by 1 keV electron …
Area selective grafting of siloxane molecules on low-k dielectric with respect to copper surface
A Rezvanov, ES Gornev, JF de Marneffe… - Applied Surface Science, 2019 - Elsevier
The selective pore sealing of porous organosilica glass (OSG k= 2.4) dielectrics by self-
assembled monolayers (SAM) is studied, using three precursors:(3-trimethoxysilylpropyl) …
assembled monolayers (SAM) is studied, using three precursors:(3-trimethoxysilylpropyl) …