The electrodes of semiconductor gas sensors are important in characterizing sensors based
on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types …

A new insulation film, PO x N y H z, has been fabricated on n-InP substrate surface using
vapor transport technique for use as an interfacial layer on n-InP Schottky contact devices …

High barrier Yb/p‐InP metal‐insulator‐semiconductor (MIS) and metal‐semiconductor (MS)
junctions were fabricated by evaporation of Yb on InP: Zn substrates. The capacitance …

In this paper, we present studies of the I–V characteristics of CdZnTe (CZT) detectors with Pt
contacts fabricated from high-resistivity single crystals grown by the high-pressure Bridgman …

A rectifying metal-semiconductor contact is known as a Schottky barrier after W. Schottky,
who first proposed a model for barrier formation. Our knowledge of metal-semiconductor …

A method to fabricate Au-n-type InP Schottky contacts with an interfacial layer has been
developed. The interfacial layer is formed by deposition of a P x O y layer and reaction of this …

The effect of the TiO 2 interfacial layer on rectifying junction parameters of Ag/TiO 2/n-InP/Au
Schottky diodes has been investigated using current-voltage (IV) measurements in the …

Sputtering yield characteristics of Ar ion-beam etching on InP have been determined.
Damage generated by ion-beam bombardment has also been investigated by using …

Organic‐on‐inorganic (OI) contact barrier devices have been applied to the study of InP and
In0. 53Ga0. 47As surfaces. The characteristics of these devices differ from OI diodes …

The electrical and interfacial properties of the Au/n-InP and Au/NiPc Schottky contact on n-
type InP have been analyzed by I–V, C–V, C–f and G–f measurements. The NiPc-based …