X Yang, H Chen, Y Zhang, T Hou, P Ren… - ACM Transactions on …, 2024 - dl.acm.org
Through Silicon Vias (TSVs) are vulnerable to electromigration (EM) degradation due to their high local current densities, thereby reducing the reliability of 3D ICs with stack dies …
In this work, we propose a novel physics-informed sparse regression (PISR) framework to solve stress evolution (described by Korhonen's equations) in general multisegment wires …
In this paper, we propose a novel machine learning-based approach, called PostPInn-Em, for solving the partial differential equations for stress evolution in a confined metal …
T Hou, P Zhen, N Wong, Q Chen, G Shi… - … on Computer-Aided …, 2022 - ieeexplore.ieee.org
Electromigration (EM) is one of the major concerns in the reliability analysis of very large- scale integration (VLSI) systems due to the continuous technology scaling. Accurately …
T Hou, P Zhen, Z Ji, HB Chen - ACM Transactions on Design Automation …, 2023 - dl.acm.org
The electromigration-induced reliability issues (EM) in very large scale integration (VLSI) circuits have attracted continuous attention due to technology scaling. Traditional EM …
Abstract The reliability of Very Large Scale Integration (VLSI) circuits is crucial in modern electronic devices. VLSI circuits, which contain millions of transistors, are vulnerable to a …
Electromigration (EM) becomes a major concern for VLSI circuits as the technology advances in the nanometer regime. The crux of problem is to solve the partial differential …
Electromigration (EM) has become the major concern for integrated circuits (ICs) in advanced technology nodes. Traditional empirical EM models, such as Black's equation …