Boundary conditions (BCs) to the Poisson and transport equations for stationary transport
processes of non-equilibrium carriers in semiconductor structures are formulated. The …

We present a microscopic analysis of current fluctuations in a semiconductor sample in the
presence of trapping–detrapping processes and conventional scattering mechanisms. An …

An investigation of the low-temperature operation of a 0.5 μm-gate Si: SiGe depletion-mode
n-type modulation-doped field-effect transistor is presented. The investigated temperatures …

We review the main problems met by the Monte Carlo technique when dealing with the
study of noise in electronic devices. We also summarize the major challenges in the noise …

The noise performance of double-gated (DG) and single-gated (SG) MOSFETs is compared.
We observe a significant improvement of the noise figure (NF) in the DG structure, which is …

A comparative Monte Carlo study dealing with the influence of the Ge profile on current-
mode operation noise of n-Si/p-Si 1-x Ge x heterojunctions is presented. Uniform profiles …

Plasma waves in gated 2‐D systems can be used to detect THz electromagnetic radiation.
This work reports on a two‐dimensional hydrodynamic‐model (HDM) applied to investigate …

We report a study of the noise properties of an–p–n Si BJT in the common-emitter
configuration. A two-dimensional microscopic Monte Carlo simulator was employed in order …

We present a study of the thermal noise locally generated in a Si/SiGe MOSFET. We use a
Langevin stochastic noise source model in order to obtain the noise generated locally by …

We present a microscopic analysis of current fluctuations in a GaAs n+-n-metal Schottky
barrier diode containing electron traps in the active layer. An ensemble Monte Carlo …