The development of the next generation of optical phase change technologies for integrated
photonic and free-space platforms relies on the availability of materials that can be switched …

Among phase change materials, Ge-rich GeSbTe alloys (GGST) are key alloys for the next
generation of embedded phase change memories because of their good thermal stability …

The phase transition temperature and crystallization kinetics of phase-change materials
(PCMs) are crucial characteristics for their performance, data retention, and reliability in …

Ge‐rich GST (GGST) alloys have been shown to fulfill the tough temperature specifications
required by automotive applications. Thus, they are the most promising materials for the …

Flexible electronics which are easy to manufacture and integrate into everyday items require
suitable memory technology that can function on flexible surfaces. Herein, the properties of …

Abstract Ge-rich Ge-Sb-Te (GGST) alloys are being currently integrated to the
complementary metal oxide semiconductor technology for industrial production of new …

The effect of back-end of line (BEOL) process on cell performance and reliability of Phase-
Change Memory embedded in a 28nm FD-SOI platform (ePCM) is discussed. The …

A machine-learned interatomic potential for Ge-rich Ge $ _x $ Te alloys has been developed
aiming at uncovering the kinetics of phase separation and crystallization in these materials …

Germanium-rich alloys of Ge2Sb2Te5 have been developed to improve the reliability and
performance of embedded phase change memory (PCM). Fast program operation …

Ge‐rich Ge–Sb–Te (GGST) alloys are the most promising materials for phase‐change
memory in embedded applications, being able to fulfill the tough data retention requirements …