We report on the low-field electron mobility in bulk wurtzite InN at room temperature and
over a wide range of carrier concentration calculated by the ensemble Monte Carlo (MC) …

Currently single junction Si solar photovoltaic limitation and scope of Si hetero-junction cell
has driven research towards advanced solar cell. Successful absorption of high energy …

Based on the full band electronic structure calculations, first we consider the effect of n-type
doping on the optical absorption and the refractive index in wurtzite InN and GaN. We …

We investigate the transient and steady-state electron transport properties in bulk wurtzite
InN using the ensemble Monte Carlo method. The main emphasis is given to the origin of …

This thesis discusses III-Nitride materials and material systems on which HEMTs are based.
Own Monte Carlo simulations are supplemented by an extensive study of experimental and …

The results of an ensemble Monte Carlo model of the electron transport in wurtzite gallium
nitride (GaN) and indium nitride (InN) are presented. There is a controversy over the material …

We studied the transport and low-field mobility properties of bulk InN and a two-dimensional
electron gas confined in an InGaN/GaN quantum well with regard to various parameters …

A semiclassical three-valley Monte Carlo simulation approach was used to investigate
electron transport in bulk InN using a revised set of material parameters. The simulation …

In semi-classical transport, it has become common practice over the past few decades to use
ensemble Monte Carlo methods for the simulation of transport in semiconductor devices …

Abstract Using ensemble Monte Carlo simulation technique, we have calculated the
transport properties of InN such as the drift velocity, the drift mobility, the average electron …