Improved space vector modulation for neutral-point balancing control in hybrid-switch-based T-type neutral-point-clamped inverters with loss and common-mode …
This paper compares different space vector modulation (SVM) strategies for neutral-point
voltage balancing (NPVB) control in three-level (3-L) T-type neutral-point-clamped (TNPC) …
voltage balancing (NPVB) control in three-level (3-L) T-type neutral-point-clamped (TNPC) …
Hardware design of a 1.7 kV SiC MOSFET based MMC for medium voltage motor drives
This paper presents the hardware design of a 7 kV dc bus, 1 MVA, 0-1,000 Hz, 1.7 kV SiC
MOSFET based medium voltage variable speed drive (MVVSD) 1. The system is based on a …
MOSFET based medium voltage variable speed drive (MVVSD) 1. The system is based on a …
A closed-loop active gate driver of SiC MOSFET for voltage spike suppression
Z Gao, J Zhang, Y Huang, R Guan… - IEEE Open Journal of …, 2022 - ieeexplore.ieee.org
The development trend of power converter is high frequency, high efficiency and high-power
density. Compared with silicon-based power devices, SiC MOSFET has been widely used …
density. Compared with silicon-based power devices, SiC MOSFET has been widely used …
Junction temperature measurement method for SiC bipolar junction transistor using base–collector voltage drop at low current
B Shi, S Feng, Y Zhang, K Bai, Y Xiao… - … on Power Electronics, 2019 - ieeexplore.ieee.org
This paper proposes an electrical method for estimation of the vertical junction temperature
of silicon carbide bipolar junction transistors (SiC BJTs). This measurement method is based …
of silicon carbide bipolar junction transistors (SiC BJTs). This measurement method is based …
[HTML][HTML] Advanced Voltage Balancing Techniques for Series-Connected SiC-MOSFET Devices: A Comprehensive Survey
LFS Alves, P Lefranc, PO Jeannin, B Sarrazin - Power Electronic Devices …, 2023 - Elsevier
This paper presents a comprehensive survey of voltage balancing techniques for series-
connected SiC-MOSFETs. The concept of connecting power devices in series is appealing …
connected SiC-MOSFETs. The concept of connecting power devices in series is appealing …
Methodology of an Accurate Static I–V Characterization of Power Semiconductor Devices
Static I-Vcharacterization (SIVC) is extensively used by the researchers for evaluating the
ON-state performance and real-time condition monitoring of the power semiconductor …
ON-state performance and real-time condition monitoring of the power semiconductor …
Temperature dependence of 55 nm gate oxide, 2.3 kV SiC power JBSFETs with linear, hexagonal, and octagonal cell layouts
A Agarwal, BJ Baliga - IEEE Transactions on Electron Devices, 2022 - ieeexplore.ieee.org
The electrical characteristics of 2.3-kV 4H-SiC power Junction Barrier Schottky Field-Effect
Transistors (JBSFETs) fabricated with 55-nm gate oxide thickness are reported as a function …
Transistors (JBSFETs) fabricated with 55-nm gate oxide thickness are reported as a function …
Design and implementation of automated characterization of t-type based power module for pv inverter reliability assessment
A Siraj, M McKinney, Z Zhang… - 2022 IEEE Energy …, 2022 - ieeexplore.ieee.org
Reliability of power electronics holds the key for future power and energy systems since it is
essential for system integration with renewables and energy storage systems. Variation of …
essential for system integration with renewables and energy storage systems. Variation of …
Design Evaluation of Medium-Voltage and High-Power Modularized DC/DC Converters with SiC MOSFETs
GL Rødal, YV Pushpalatha… - 2021 23rd European …, 2021 - ieeexplore.ieee.org
This paper investigates the efficiency, performance, and design complexity of medium-
voltage and highpower modularized dual active bridge (MDAB) converters employing high …
voltage and highpower modularized dual active bridge (MDAB) converters employing high …
Active gate current control for non-insulating-gate WBG devices
This paper proposes an Active Gate Current Control (AGCC) strategy for non-insulating gate
WBG devices, for example, gallium nitride gate-injection-transistor (GaN-GIT) and silicon …
WBG devices, for example, gallium nitride gate-injection-transistor (GaN-GIT) and silicon …