High-power high-efficiency class-E-like stacked mmWave PAs in SOI and bulk CMOS: Theory and implementation

A Chakrabarti, H Krishnaswamy - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
<? Pub Dtl=""?> Series stacking of multiple devices is a promising technique that can help
overcome some of the fundamental limitations of CMOS technology in order to improve the …

A 60-GHz outphasing transmitter in 40-nm CMOS

D Zhao, S Kulkarni, P Reynaert - IEEE Journal of Solid-State …, 2012 - ieeexplore.ieee.org
This paper presents the analysis, design, and implementation of a 60-GHz outphasing
transmitter in 40-nm bulk CMOS. The 60-GHz outphasing transmitter is optimized for high …

A high-efficiency 28GHz outphasing PA with 23dBm output power using a triaxial balun combiner

B Rabet, J Buckwalter - 2018 IEEE International Solid-State …, 2018 - ieeexplore.ieee.org
Gigabit-per-second millimeter-wave (mm-wave) access and backhaul networks at 28GHz
demand high-order QAM, OFDM, and/or carrier-aggregated waveforms that force the PA to …

Digitally modulated CMOS polar transmitters for highly-efficient mm-wave wireless communication

K Khalaf, V Vidojkovic, K Vaesen… - IEEE Journal of Solid …, 2016 - ieeexplore.ieee.org
A polar transmitter (TX) is implemented at 60 GHz, enabling a power amplifier (PA) to
operate in saturation where efficiency is highest, even when handling higher order …

High power, high efficiency stacked mmWave Class-E-like power amplifiers in 45nm SOI CMOS

A Chakrabarti, H Krishnaswamy - Proceedings of the IEEE …, 2012 - ieeexplore.ieee.org
Stacking devices in CMOS power amplifiers (PAs) increases the achievable output voltage
swing, thereby increasing the output power and efficiency, particularly at millimeter-wave …

A 120 GHz fully integrated 10 Gb/s short-range star-QAM wireless transmitter with on-chip bondwire antenna in 45 nm low power CMOS

N Deferm, P Reynaert - IEEE Journal of Solid-State Circuits, 2014 - ieeexplore.ieee.org
In this paper, a fully integrated D-band transmitter with on-chip dipole bondwire antenna
implemented in 45 nm low-power CMOS is presented. The purpose of this 120 GHz wireless …

Large-scale power-combining and linearization in watt-class mmWave CMOS power amplifiers

R Bhat, A Chakrabarti… - 2013 IEEE Radio …, 2013 - ieeexplore.ieee.org
Switching-class PAs employing device-stacking have been recently explored to meet the
challenge of efficient power amplification at mmWave frequencies at moderate power levels …

A 60-GHz power amplifier design using dual-radial symmetric architecture in 90-nm low-power CMOS

JF Yeh, JH Tsai, TW Huang - IEEE transactions on microwave …, 2013 - ieeexplore.ieee.org
An innovative on-chip 3-D power amplifier (PA) architecture for M-way power-combined
CMOS PAs by using the proposed dual-radial symmetric architecture is presented. It …

A 76–84 GHz SiGe power amplifier array employing low-loss four-way differential combining transformer

M Thian, M Tiebout, NB Buchanan… - IEEE transactions on …, 2012 - ieeexplore.ieee.org
This paper presents holistic design of a novel four-way differential power-combining
transformer for use in millimeter-wave power-amplifier (PA). The combiner with an inner …

Multi‐output stacked class‐E millimetre‐wave power amplifiers in 45 nm silicon‐on‐insulator metal–oxide–semiconductor: theory and implementation

A Chakrabarti, H Krishnaswamy - IET Microwaves, Antennas & …, 2015 - Wiley Online Library
Series stacking of multiple devices in power amplifiers is a promising technique that has
been explored recently at millimetre‐wave frequencies to overcome some of the …