The influence of the growth rate and V/III ratio on the crystal quality of In0. 2GaAs/GaAs
quantum well structures was examined. The investigated heterostructures were grown by …

It is shown that MOCVD growth allows to obtain BGaN epitaxial layers at growth temperature
(T gr) between 840 and 1090° C. It is found that morphology of the epitaxial layers and …

In this report we investigate structural and electrical properties of epitaxial Chemical Vapor
Deposition quasi-free-standing graphene on an unintentionally-doped homoepitaxial layer …

Optical reflectance (R) and high-resolution X-ray diffraction (HR XRD) have been used for
characterization and verification of the distributed Bragg reflectors (DBR) grown by two …

The chemical composition profile of the GaAs/AlGaAs quantum cascade structures grown on
(001) GaAs substrate by molecular beam epitaxy is studied by a synchrotron radiation high …

Quantum cascade (QC) lasers and vertical-cavity surface-emitting lasers (VCSELs) are of
great interest due to their potential importance for a variety of device applications. Both kinds …

New possibilities are presented for the characterization of AIIIBV mixed superlattice
compounds by the complementary use of synchrotron diffraction topography and rocking …

The determination of the chemical composition profile of GaAs/AlGaAs heterostructures
designed for quantum cascade lasers is crucial for the development of the special …

Mój wkład polegał na i) zidentyfikowaniu zależności pomiędzy parametrami materiału a
warunkami wzrostu epitaksjalnego, ii) przeprowadzeniu eksperymentu polegającego na …

Supersieci GaAs/AlAs i AlGaAs/AlAs przeznaczone do wykorzystania jako zwierciadła
Bragga otrzymano zarówno metodą epitaksji z wiązek molekularnych MBE, jak i epitaksji z …