Negative-capacitance FET with a cold source

S Guo, RJ Prentki, K Jin, H Guo - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
The subthreshold swing (SS) of a field-effect transistor (FET) is given by the body factor
multiplied by the transport factor and has a limit of at room temperature in the case of the …

Nanowire transistors with bound-charge engineering

RJ Prentki, M Harb, L Liu, H Guo - Physical Review Letters, 2020 - APS
Low-dimensional electronic systems such as silicon nanowires exhibit weak screening
which is detrimental to the performance and scalability of nanodevices, eg, tunnel field-effect …

2D Material-Based MVS Model and Circuit Performance Analysis for GeH Field-Effect Transistors

Y Zhao, Y Yoon, L Wei - IEEE Transactions on Nanotechnology, 2023 - ieeexplore.ieee.org
This paper presents an improved multi-level simulation framework for 2D material-based
nanoelectronics, which expands from device simulation, physics-based compact modeling …

Analytical Model for Monolayer Phosphorene DG-FETs in the Ballistic Regime

AM de Souza, DR Celino… - … Materials and Devices …, 2023 - ieeexplore.ieee.org
This paper presents an analytical model for ballistic double-gate field-effect transistors (DG-
FETs) based on monolayer phosphorene. Unlike other approaches, our formulation does …

[图书][B] Theory and simulation of novel low-power nanotransistors

RJ Prentki - 2021 - search.proquest.com
Moore's law predicts an exponential growth of the number of transistors on integrated
circuits (ICs). Transistors are now being downscaled to nanometric dimensions, making it …

A surface potential model for field-effect transistors with bound-charge engineering

RJ Prentki - IEEE Transactions on Electron Devices, 2021 - ieeexplore.ieee.org
Semiconductor doping is limited by such practical concerns as bandgap narrowing and solid
solubility limits of dopants. Bound-charge engineering (BCE) bypasses these limits by …

A Physics-based Analytical Model for Ballistic InSe Nanotransistors

AM de Souza, DR Celino, R Ragi… - 2024 IEEE 24th …, 2024 - ieeexplore.ieee.org
This paper presents a physics-based model for ballistic field-effect nanotransistors, focusing
on devices based on a two-dimensional indium selenide (InSe) channel. Through an …

Modelagem compacta para transistores MOS: nanofios sem junções e canais bidimensionais

AM Souza - 2024 - teses.usp.br
â Diante da iminente saturação da Lei de Moore, a comunidade acadêmica se empenha na
exploração de alternativas ao MOSFET convencional de silício, seja inovando nos …