Physical mechanisms of negative-bias temperature instability
L Tsetseris, XJ Zhou, DM Fleetwood… - Applied Physics …, 2005 - pubs.aip.org
We report first-principles calculations that elucidate the mechanisms that underlie key
features of negative-bias temperature instability (NBTI). We show that the depassivation of Si …
features of negative-bias temperature instability (NBTI). We show that the depassivation of Si …
Interface trap generation and hole trapping under NBTI and PBTI in advanced CMOS technology with a 2-nm gate oxide
M Denais, V Huard, C Parthasarathy… - … on Device and …, 2004 - ieeexplore.ieee.org
This paper gives an insight into the degradation mechanisms during negative and positive
bias temperature instabilities in advanced CMOS technology with a 2-nm gate oxide. We …
bias temperature instabilities in advanced CMOS technology with a 2-nm gate oxide. We …
Positive Bias Temperature Instability and Hot Carrier Degradation of Back-End-of-Line, nm-Thick, In2O3 Thin-Film Transistors
Recently, back-end-of-line (BEOL) compatible indium oxide (In 2 O 3) thin-film transistors
(TFTs), grown by atomic layer deposition (ALD) with channel thickness of~ 1 nm and …
(TFTs), grown by atomic layer deposition (ALD) with channel thickness of~ 1 nm and …
Bias-temperature instabilities of polysilicon gate HfO/sub 2/MOSFETs
Bias-temperature instabilities (BTI) of HfO/sub 2/metal oxide semiconductor field effect
transistors (MOSFETs) have been systematically studied for the first time. NMOS positive BTI …
transistors (MOSFETs) have been systematically studied for the first time. NMOS positive BTI …
Performance, reliability, radiation effects, and aging issues in microelectronics–From atomic-scale physics to engineering-level modeling
The development of engineering-level models requires adoption of physical mechanisms
that underlie observed phenomena. This paper reviews several cases where parameter …
that underlie observed phenomena. This paper reviews several cases where parameter …
[HTML][HTML] Reliability-aware resource management in multi-/many-core systems: A perspective paper
With the advancement of technology scaling, multi/many-core platforms are getting more
attention in embedded systems due to the ever-increasing performance requirements and …
attention in embedded systems due to the ever-increasing performance requirements and …
Bias-temperature instabilities and radiation effects in MOS devices
XJ Zhou, DM Fleetwood, JA Felix… - … on Nuclear Science, 2005 - ieeexplore.ieee.org
We report the combined effects of irradiation and bias temperature stress (BTS) on MOS
capacitors with HfO/sub 2/dielectrics. Irradiation is found to enhance BTS-induced …
capacitors with HfO/sub 2/dielectrics. Irradiation is found to enhance BTS-induced …
Investigation of trap-induced performance degradation and restriction on higher ferroelectric thickness in negative capacitance FDSOI FET
Bias Temperature Instability (BTI) has always been a critical reliability issue in a field effect
transistor (FET). In a negative capacitance (NC) FET, a study of BTI with considering the …
transistor (FET). In a negative capacitance (NC) FET, a study of BTI with considering the …
Hydrogen in MOSFETs–A primary agent of reliability issues
Hydrogen plays an important role in MOSFETS as it is intentionally introduced to passivate
defects (primarily Si dangling bonds) at the Si–SiO2 interface. At the same time, hydrogen …
defects (primarily Si dangling bonds) at the Si–SiO2 interface. At the same time, hydrogen …
Simulation of statistical aspects of charge trapping and related degradation in bulk MOSFETs in the presence of random discrete dopants
MF Bukhori, S Roy, A Asenov - IEEE transactions on electron …, 2010 - ieeexplore.ieee.org
The distribution of fractional current change and threshold voltage shift in an ensemble of
realistic 35 nm bulk negative-channel metal-oxide-semiconductor field-effect transistors …
realistic 35 nm bulk negative-channel metal-oxide-semiconductor field-effect transistors …