[PDF][PDF] 采用新兴隧穿器件的低功耗微控制器设计与实现
蔡浩， 童辛芳， 杨军 - 电子与信息学报, 2024 - jeit.ac.cn
基于隧穿场效应晶体管(TFET) 器件的低功耗微控制器设计将器件, 电路和系统结合,
利用具有超低亚阈值摆幅特性的器件使得电路在非工作情况下达到极低泄露功耗 …
利用具有超低亚阈值摆幅特性的器件使得电路在非工作情况下达到极低泄露功耗 …
Comparison of Electrical Characteristics of Si Homojunction and SiGe Heterojunction 14 nm SOI FinFET
SK Aujla, N Kaur - Journal of The Institution of Engineers (India): Series B, 2022 - Springer
Abstract Novel Si/SiGe homojunction and heterojunction channel silicon on insulator (SOI)
fin field-effect transistor at 14 nm gate length has been delineated in the research article …
fin field-effect transistor at 14 nm gate length has been delineated in the research article …
Low-power Microcontroller Units Design and Realization Using Emerging Tunneling Field Effect Transistors
H CAI, X TONG, J YANG - 电子与信息学报, 2024 - jeit.ac.cn
Abstract Tunneling Field Effect Transistor (TFET)-based low-power microcontroller design
combines devices, circuits, and systems to achieve extremely low leakage power …
combines devices, circuits, and systems to achieve extremely low leakage power …