Field-effect transistors based on two-dimensional (2D) materials have the potential to be
used in very large-scale integration (VLSI) technology, but whether they can be used at the …

The electrical resistance of interconnect wires increases with decreasing size, causing
signal delay and energy consumption that limits further downscaling of integrated circuits …

A major challenge for the continued downscaling of integrated circuits is the resistivity
increase of Cu interconnect lines with decreasing dimensions. Alternative metals have the …

As the challenges in continued scaling of the integrated circuit technology escalate every
generation, there is an urgent need to find viable solutions for both the front-end-of-line …

The purpose of this research was to investigate the potential use of Cu–Ti 3 AlC 2
composites sliding against a Cu–5% Ag alloy as a viable electrical contact couple. Sliding …

Integrated circuits (ICs) are challenged to deliver historically anticipated performance
improvements while increasing the cost and complexity of the technology with each …

This study demonstrates molybdenum disulfide (MoS2) as a superior candidate as a
diffusion barrier and liner. This research explores a newly developed process to show how …

Cardiac troponin I (cTnI) is a “gold standard biomarker” for clinical diagnose of acute
myocardial infarction (AMI). Rapid, accurate, and sensitive detection methods for cTnI are …

This study presents the utilization of MoS2 as a diffusion barrier for metal interconnects, in
situ transmission electron microscopy (TEM) observations are employed for comprehensive …

A reliable method for preparing a conformal amorphous carbon (a‐C) layer with a thickness
of 1‐nm‐level, is tested as a possible Cu diffusion barrier layer for next‐generation ultrahigh …