A review of power electronic devices for heavy goods vehicles electrification: Performance and reliability
This review explores the performance and reliability of power semiconductor devices
required to enable the electrification of heavy goods vehicles (HGVs). HGV electrification …
required to enable the electrification of heavy goods vehicles (HGVs). HGV electrification …
Investigations of SiC MOSFET short-circuit failure mechanisms using electrical, thermal, and mechanical stress analyses
K Yao, H Yano, H Tadano… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
In this study, unique short-circuit failure mechanisms in 1.2-kV SiC metal-oxide-
semiconductor field-effect transistors (MOSFETs) at 400 and 800-V dc bias were …
semiconductor field-effect transistors (MOSFETs) at 400 and 800-V dc bias were …
Performance of parallel connected sic mosfets under short circuits conditions
This paper investigates the impact of parameter variation between parallel connected SiC
MOSFETs on short circuit (SC) performance. SC tests are performed on parallel connected …
MOSFETs on short circuit (SC) performance. SC tests are performed on parallel connected …
Gate Bias Dependence of VTH Degradation in Planar and Trench SiC MOSFETs Under Repetitive Short Circuit Tests
Y Li, X Zhou, Y Zhao, Y Jia, D Hu, Y Wu… - … on Electron Devices, 2022 - ieeexplore.ieee.org
The reliability of SiC MOSFETs under harsh operating conditions, such as short circuit (SC)
stress, remains a major concern. In this article, a dedicated aging platform is developed to …
stress, remains a major concern. In this article, a dedicated aging platform is developed to …
Investigations of short-circuit failure in double trench SiC MOSFETs through three-dimensional electro-thermal-mechanical stress analysis
In this study, the short-circuit failure mechanisms of 1.2 kV double trench SiC MOSFETs
were investigated by experiment and three-dimensional numerical TCAD simulation …
were investigated by experiment and three-dimensional numerical TCAD simulation …
Experimental and numerical investigations of short-circuit failure mechanisms for state-of-the-art 1.2 kV SiC trench MOSFETs
M Okawa, R Aiba, T Kanamori, H Yano… - … Devices and ICs …, 2019 - ieeexplore.ieee.org
This paper is focused on the short-circuit capability and analysis of failure mechanism on
relatively small DC power supply voltage for state-of-the-art 1.2 kV SiC trench MOSFETs. It is …
relatively small DC power supply voltage for state-of-the-art 1.2 kV SiC trench MOSFETs. It is …
Measurements and Review of Failure Mechanisms and Reliability Constraints of 4H-SiC Power MOSFETs Under Short Circuit Events
The reliability of the SiC MOSFET has always been a factor hindering the device application,
especially under high voltage and high current conditions, such as in the short circuit events …
especially under high voltage and high current conditions, such as in the short circuit events …
Particularities of the short-circuit operation and failure modes of SiC-MOSFETs
C Unger, M Pfost - IEEE Journal of Emerging and Selected …, 2021 - ieeexplore.ieee.org
During short-circuit operation, silicon carbide MOSFETs exhibit several peculiarities
compared to conventional silicon MOSFETs. These comprise the influence of the off-state …
compared to conventional silicon MOSFETs. These comprise the influence of the off-state …
Short-circuit ruggedness analysis of SiC JMOS and DMOS
To prevent the degradation caused by Bessel plane dislocation and improve the
characteristics of body diode in silicon carbide MOSFETs, Schottky barrier diode integrated …
characteristics of body diode in silicon carbide MOSFETs, Schottky barrier diode integrated …
Investigation of gate and drain leakage currents during the short circuit of SiC-MOSFETs
C Unger, M Pfost - … on Power Semiconductor Devices and ICs …, 2020 - ieeexplore.ieee.org
SiC-MOSFETs can reach very high temperatures during short circuit events. Under these
conditions, significant drain leakage currents eventually cause the destruction of the device …
conditions, significant drain leakage currents eventually cause the destruction of the device …