Engineering the defects and microstructures in ferroelectrics for enhanced/novel properties: an emerging way to cope with energy crisis and environmental pollution

W Dong, H Xiao, Y Jia, L Chen, H Geng… - Advanced …, 2022 - Wiley Online Library
In the past century, ferroelectrics are well known in electroceramics and microelectronics for
their unique ferroelectric, piezoelectric, pyroelectric, and photovoltaic effects. Nowadays, the …

An in-memory computing architecture based on a duplex two-dimensional material structure for in situ machine learning

H Ning, Z Yu, Q Zhang, H Wen, B Gao, Y Mao… - Nature …, 2023 - nature.com
The growing computational demand in artificial intelligence calls for hardware solutions that
are capable of in situ machine learning, where both training and inference are performed by …

Overview and outlook of emerging non-volatile memories

M Si, HY Cheng, T Ando, G Hu, PD Ye - Mrs Bulletin, 2021 - Springer
Memory technologies with higher density, higher bandwidth, lower power consumption,
higher speed, and lower cost are in high demand in the current big data era. In this paper …

Logic compatible high-performance ferroelectric transistor memory

S Dutta, H Ye, AA Khandker, SG Kirtania… - IEEE Electron …, 2022 - ieeexplore.ieee.org
Silicon channel ferroelectric field-effect transistors (FeFETs) with low-k interfacial layer (IL)
between ferroelectric and silicon channel suffers from high write voltage, limited write …

Unraveling the dynamics of charge trapping and de-trapping in ferroelectric FETs

S Deng, Z Zhao, YS Kim, S Duenkel… - … on Electron Devices, 2022 - ieeexplore.ieee.org
In this work, a comprehensive study of charge trapping and de-trapping dynamics is
performed on n-channel ferroelectric field-effect transistors (nFeFETs) and pFeFETs. It is …

Ferroelectric [HfO2/ZrO2] Superlattices with Enhanced Polarization, Tailored Coercive Field, and Improved High Temperature Reliability

D Lehninger, A Prabhu, A Sünbül, T Ali… - Advanced Physics …, 2023 - Wiley Online Library
Modern microelectronic systems and applications demand an every increasing amount of
non‐volatile memories that are fast, reliable, and consume little power. Memory concepts …

Felix: A ferroelectric fet based low power mixed-signal in-memory architecture for dnn acceleration

T Soliman, N Laleni, T Kirchner, F Müller… - ACM Transactions on …, 2022 - dl.acm.org
Today, a large number of applications depend on deep neural networks (DNN) to process
data and perform complicated tasks at restricted power and latency specifications …

Impact of random spatial fluctuation in non-uniform crystalline phases on the device variation of ferroelectric FET

C Garg, N Chauhan, S Deng, AI Khan… - IEEE Electron …, 2021 - ieeexplore.ieee.org
In this work, a comprehensive study of random spatial fluctuation of the ferroelectric (FE)
phase and dielectric (DE) phase in FeFETs is conducted to understand its impact on device …

Recent research for HZO-based ferroelectric memory towards in-memory computing applications

J Yoo, H Song, H Lee, S Lim, S Kim, K Heo, H Bae - Electronics, 2023 - mdpi.com
The AI and IoT era requires software and hardware capable of efficiently processing
massive amounts data quickly and at a low cost. However, there are bottlenecks in existing …

Ferroelectric 2D SnS2 Analog Synaptic FET

CM Song, D Kim, S Lee, HJ Kwon - Advanced Science, 2024 - Wiley Online Library
In this study, the development and characterization of 2D ferroelectric field‐effect transistor
(2D FeFET) devices are presented, utilizing nanoscale ferroelectric HfZrO2 (HZO) and 2D …