Reduced dislocation introduction in III–V/Si heterostructures with glide-enhancing compressively strained superlattices
The novel use of a GaAs y P1–y/GaP compressively strained superlattice (CSS) to provide
enhanced control over misfit dislocation (MD) evolution and threading dislocation density …
enhanced control over misfit dislocation (MD) evolution and threading dislocation density …
Correlation of early-stage growth process conditions with dislocation evolution in MOCVD-based GaP/Si heteroepitaxy
JT Boyer, AN Blumer, ZH Blumer, DL Lepkowski… - Journal of Crystal …, 2021 - Elsevier
To identify the complex relationships between early-stage growth processes and the
resultant defect microstructure in GaP/Si heteroepitaxy, a holistic study of several key metal …
resultant defect microstructure in GaP/Si heteroepitaxy, a holistic study of several key metal …
Log-Normal Glide and the Formation of Misfit Dislocation Networks in Heteroepitaxial ZnS on GaP
A Fonseca Montenegro, M Baan… - Crystal Growth & …, 2024 - ACS Publications
Scanning electron microscopy (SEM)-based electron channeling contrast imaging (ECCI) is
used to observe and quantify misfit dislocation (MD) networks formed at the heteroepitaxial …
used to observe and quantify misfit dislocation (MD) networks formed at the heteroepitaxial …
Log-normal glide and the formation of misfit dislocation networks in heteroepitaxial ZnS on GaP
AF Montenegro, M Baan, M Ghazisaeidi… - arXiv preprint arXiv …, 2024 - arxiv.org
Scanning electron microscopy (SEM) based electron channeling contrast imaging (ECCI) is
used to observe and quantify misfit dislocation (MD) networks formed at the heteroepitaxial …
used to observe and quantify misfit dislocation (MD) networks formed at the heteroepitaxial …
Quantitative misfit dislocation characterization with electron channeling contrast imaging
Electron channeling contrast imaging (ECCI), a diffraction-based technique in the scanning
electron microscope (SEM), has become an increasingly popular tool for characterization of …
electron microscope (SEM), has become an increasingly popular tool for characterization of …
Development of Low-TDD GaAsyP1-y/GaP/Si Metamorphic Materials for High-Efficiency III-V/Si Photovoltaics
Metamorphic III-V/Si materials with low threading dislocation density (TDD) are critical to
realizing high-efficiency III-V/Si multijunction photovoltaics. In pursuit of a dual junction III …
realizing high-efficiency III-V/Si multijunction photovoltaics. In pursuit of a dual junction III …