The paper reviews electrochemically etched pores in III–V compound semiconductors (GaP,
InP, GaAs) with emphasis on nucleation and formation mechanisms, pore geometries and …

In this review paper, we present a comparative analysis of the electrochemical dissolution of
III–V (InP, GaAs, GaN), II–VI (ZnSe, CdSe) and SiC semiconductor compounds. The …

A novel united atom force field affords accurate and quantitative reproduction of the
adsorption properties of linear and branched alkanes in nanoporous framework structures …

Porous n-GaN has been fabricated using electrochemical anodic etching in a 0.5 M H2SO4
solution in the dark for different biases (5.5–18.0 V). The pore morphology of the porous …

Pores in single crystalline semiconductors come in many forms (eg, pore sizes from 2 nm to>
10 µm; morphologies from perfect pore crystal to fractal) and exhibit many unique properties …

Pore formation in n‐type III–V semiconductors will be discussed and compared to pore
formation in silicon. While by now many different kinds of pores were produced in silicon, the …

We report on fabrication of two-dimensional metallo-semiconductor networks by using
pulsed electroplating of Pt inside electrochemically-prepared porous GaP layers with …

The properties of porous GaP, formed by anodic etching in are described. Pore size, pore
density, and the interpore distance depend on the dopant density and the potential at which …

In this paper, a review on electrochemical porous etching of semiconductors is proposed.
After a brief history, chemical and electrochemical etching of semiconductors are considered …

Porous GaN (PGaN) produced by Pt-assisted electroless etching has been studied by
Raman spectroscopy. Three different unintentionally doped GaN films grown by hydride …