Hafnium oxide (HfO2) thin films have been made by atomic vapor deposition (AVD) onto Si
substrates under different growth temperature and oxygen flow. The effect of different growth …

The operation of resistive and phase-change memory (RRAM and PCM) is controlled by
highly localized self-heating effects, yet detailed studies of their temperature are rare due to …

An improved understanding of the oxidation resistance of HfC-TaC ultra-high temperature
ceramics (UHTCs) is developed through modeling of the phase equilibria in the Hf-Ta-O …

Rigorous studies on hafnium oxide (HfO 2) thin films are crucial as it is regarded as the ideal
insulating material, for the replacement of silicon dioxide (SiO 2) dielectric material, widely …

HfO 2/ZrO 2 multilayer films were deposited by atomic layer deposition (ALD) method. The
remnant polarization and the dielectric constant are remarkably improved to 10.2 µC/cm 2 …

Defects in metal oxides play a crucial role in the performance of semiconductor devices in
modern microelectronics. Due to different growth techniques and growth parameters, the …

Application of micro-Raman spectroscopy for the monitoring of quality of high-k (hk)
dielectric protective layer deposition onto the surface of a nanowire (NW) chip has been …

Using sol-gel based spin coating HfO 2 thin films were prepared on quartz substrates. The
effect of sol-layer thickness on structural, optical, morphological and compositional …

Hf 1− x Fe x O 2 (x= 0.0, 0.03, and 0.05) materials were synthesized using co-precipitation
method. The phase purity and crystal structure of various Fe doped Hf 1− x Fe x O 2 …

Ferroelectricity was demonstrated for Pulsed Laser Deposition (PLD) of HfO 2-ZrO 2 bilayer
thin films grown on TiN bottom electrodes on SiO 2/Si as a function of deposition conditions …