A 5.3-GHz 30.1-dBm fully integrated CMOS power amplifier with high-power built-in linearizer
JH Tsai - IEEE Microwave and Wireless Technology Letters, 2023 - ieeexplore.ieee.org
A 5.3-GHz watt-level fully integrated CMOS power amplifier (PA) with a high-power built-in
linearizer is presented in this letter. Utilizing a transformer (TF)-based 2-stage dual-radial …
linearizer is presented in this letter. Utilizing a transformer (TF)-based 2-stage dual-radial …
Design of a 5.2-GHz CMOS power amplifier using TF-based 2-stage dual-radial power splitting/combining architecture
JH Tsai - IEEE Transactions on Circuits and Systems I: Regular …, 2019 - ieeexplore.ieee.org
In this paper, a transformer (TF)-based two-stage dual-radial power splitting/combining
architecture with advantages of in-phase RF power splitting/combining scheme, compact …
architecture with advantages of in-phase RF power splitting/combining scheme, compact …
[HTML][HTML] 應用於第五代無線通訊之採用電流合成暨變壓器耦合技術互補式金氧半導體功率放大器研製
YQ Weng - 2024 - ir.lib.ncu.edu.tw
摘要(中) 本論文使用台灣積體電路製造股份有限公司(tsmcTM) 所提供之0.18-µm CMOS 1P6M
製程, 對於n77 到n79 頻段的功率放大器, 採用兩種不同的功率合成技術, 並透過濾波器的分析與 …
製程, 對於n77 到n79 頻段的功率放大器, 採用兩種不同的功率合成技術, 並透過濾波器的分析與 …
Design of a 5.3-GHz 31.3-dBm fully integrated CMOS power amplifier using folded splitting and combining architecture
JH Tsai - IEEE Transactions on Very Large Scale Integration …, 2019 - ieeexplore.ieee.org
A transformer (TF)-based folded radial power splitting and binary power combining
architecture is developed for fully integrated CMOS PA design in this paper. The proposed …
architecture is developed for fully integrated CMOS PA design in this paper. The proposed …
A 4.6-GHz Class-F−1 high power CMOS power amplifier
F Chen, Y Wang, YH Hsiao, JL Lin… - … on Radio-Frequency …, 2017 - ieeexplore.ieee.org
A 4.6-GHz Class-F-1 CMOS power amplifier implemented in 0.18-μm CMOS process for
wireless applications with high output power and high efficiency is proposed. By using …
wireless applications with high output power and high efficiency is proposed. By using …
A 5.2 GHz haft-watt fully-integrated CMOS power amplifier
JH Tsai, CF Lin, PC Shen… - 2019 IEEE 8th Global …, 2019 - ieeexplore.ieee.org
A 5.2 GHz fully-integrated power amplifier is designed and fabricated using 0.18-μm 1P6M
bulk CMOS technology. Utilizing a 2-way series combining transformer, the CMOS PA …
bulk CMOS technology. Utilizing a 2-way series combining transformer, the CMOS PA …
射頻金氧半場效電晶體高線性度混頻器和高輸出功率功率放大器之研究
陳飛飛 - 臺灣大學電信工程學研究所學位論文, 2018 - airitilibrary.com
此篇論文將介紹一個基於90 奈米互補式金屬場氧半導體製程的24 GHz 高線性度降頻混頻器和
一個基於0.18 微米互補式金屬場氧半導體製程的4.6 GHz 高輸出功率功率放大器. 第一個24 …
一個基於0.18 微米互補式金屬場氧半導體製程的4.6 GHz 高輸出功率功率放大器. 第一個24 …
A 5.6-GHz Class-DE power amplifier with reduced voltage stress in 22-nm FDSOI CMOS
M Love, M Thian, F van der Wilt… - 2019 IEEE Asia …, 2019 - ieeexplore.ieee.org
This paper presents a 5.6 GHz Class-DE power amplifier (PA) with reduced voltage stress
compared to classical PA designs. CMOS PAs are susceptible to a number of breakdown …
compared to classical PA designs. CMOS PAs are susceptible to a number of breakdown …
A 3.5-GHz Class-F Power Amplifier with Current-Reused Topology in 0.13-m CMOS for 5G Application
D Li, S Du - Journal of Circuits, Systems and Computers, 2019 - World Scientific
In this paper, a 3.5-GHz class-F Power Amplifier with current-reused topology in 0.13-μ m
CMOS for 5G application is presented. This proposed circuit has a two-stage structure by a …
CMOS for 5G application is presented. This proposed circuit has a two-stage structure by a …