Bismuth-containing heterometallic oxides are promising candidates for a variety of
applications with respect to the microelectronics industry. This is not only because of their …

Abstract Tantalum pentoxide (Ta 2 O 5) thin films have rapidly evolved into an important field
of research/development for both basic and applied science with the promise of creating a …

Non-volatile memory devices are so named because they retain information when power is
interrupted; thus they are important computer components. In this context, there has been …

Fatigue-free and highly c-axis oriented Bi 3.15 Sm 0.85 Ti 3 O 12 (BSmT) thin films were
grown on Pt/TiO 2/SiO 2/Si (100) substrates using the method of metalorganic sol …

A considerable body of knowledge now exists from studies involving the development of
lead‐free piezoelectric ceramics and a number of high potential alternatives to current lead …

Recently there has been a paradigm shift in nonvolatile computer memories from silicon-
technology-based EEPROMs (electrically erasable, programmable read-only memories) to …

Sodium bismuth titanate (Na 0.5 Bi 0.5) Ti O 3 (NBT) of perovskite structure is among the
best known lead-free piezoelectric∕ ferroelectric that promises a number of applications in …

In this research, a fatigue model for ferroelectric materials is proposed. The reasons for the
electrical fatigue resistance of SrBi 2 Ta 2 O 9 (SBT), SrBi 2 Nb 2 O 9 (SBN), and PbZr 1 _ x …

The band structure of the layered perovskite SrBi2Ta2O9 (SBT) was calculated by tight
binding and the valence band density of states was measured by x‐ray photoemission …

This review paper begins with a brief overview of the most common ferroelectric materials,
the perovskites and the Aurivillius families. The epitaxial growth of ferroelectric epitaxial films …