Radiative sky cooling: fundamental physics, materials, structures, and applications
Radiative sky cooling reduces the temperature of a system by promoting heat exchange with
the sky; its key advantage is that no input energy is required. We will review the origins of …
the sky; its key advantage is that no input energy is required. We will review the origins of …
A device-to-system perspective regarding self-heating enhanced hot carrier degradation in modern field-effect transistors: A topical review
As foreseen by Keyes in the late 1960s, the self-heating effect has emerged as an important
concern for device performance, output power density, run-time variability, and reliability of …
concern for device performance, output power density, run-time variability, and reliability of …
Layout design correlated with self-heating effect in stacked nanosheet transistors
L Cai, W Chen, G Du, X Zhang… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
With technology node scaling down to 5 nm, the narrow device geometry confines the
material thermal conductivity and further aggravates the self-heating effect in gate-all-around …
material thermal conductivity and further aggravates the self-heating effect in gate-all-around …
CMOS reliability from past to future: A survey of requirements, trends, and prediction methods
Developments in IC fabrication, emerging high-reliability markets, and government
regulations indicate potential for significant shifts in how reliability fits within IC development …
regulations indicate potential for significant shifts in how reliability fits within IC development …
Reliability modeling and analysis of hot-carrier degradation in multiple-fin SOI n-channel FinFETs with self-heating
A comprehensive study on hot-carrier degradation (HCD) mechanisms in 14 nm silicon-on-
insulator (SOI) n-channel FinFETs is presented. The impact of high-frequency AC stress bias …
insulator (SOI) n-channel FinFETs is presented. The impact of high-frequency AC stress bias …
The impact of self-heating on HCI reliability in high-performance digital circuits
While many groups attribute the greatly accelerated (ie, excess) HCI degradation in modern
transistors to the difference between the peak temperature and the average temperature (ΔT …
transistors to the difference between the peak temperature and the average temperature (ΔT …
Integrated modeling of self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern …
The evolution of transistor topology from planar to confined geometry transistors (ie, FinFET,
Nanowire FET, Nanosheet FET) has met the desired performance specification of sub-20 nm …
Nanowire FET, Nanosheet FET) has met the desired performance specification of sub-20 nm …
Impact of ambient temperature and thermal resistance on device performance of junctionless silicon-nanotube FET
In this article, a comprehensive analysis of the impact of electrothermal characteristics in the
junctionless silicon-nanotube (Si-NT) field-effect-transistors is carried out using the …
junctionless silicon-nanotube (Si-NT) field-effect-transistors is carried out using the …
Transient self-heating effects on mixed-mode hot carrier and bias temperature instability in FinFETs: Experiments and modeling
The self-heating effect (SHE) is a critical issue in nanoscale fin field effect transistors
(FinFETs) that has emerged as an essential concern for device reliability. In physical circuit …
(FinFETs) that has emerged as an essential concern for device reliability. In physical circuit …
An artificial neural network model for electro-thermal effect affected hot carrier injection reliability in 14-nm FinFETs
Y Wang, E Li, H Duan, L Tian, W Zang… - IEEE Transactions …, 2022 - ieeexplore.ieee.org
FinFETs have a bright future for advanced analog/RF and digital circuit design in 5G/6G
technology. As the integration density increases, the self-heating effect (SHE) becomes …
technology. As the integration density increases, the self-heating effect (SHE) becomes …