Si–Ge–Sn alloys grown by chemical vapour deposition: a versatile material for photonics, electronics, and thermoelectrics
Abstract Si–Ge–Sn alloys are offering unusual material properties with a strong potential to
add a variety of functionalities to advanced CMOS technology. Being a group IV alloy …
add a variety of functionalities to advanced CMOS technology. Being a group IV alloy …
[HTML][HTML] Defects in Ge and GeSn and their impact on optoelectronic properties
A Giunto, A Fontcuberta i Morral - Applied Physics Reviews, 2024 - pubs.aip.org
GeSn has emerged as a promising semiconductor with optoelectronic functionality in the
mid-infrared, with the potential of replacing expensive III–V technology for monolithic on-chip …
mid-infrared, with the potential of replacing expensive III–V technology for monolithic on-chip …
Electrically Injected mid-infrared GeSn laser on Si operating at 140 K
Owing to its true direct bandgap and tunable bandgap energies, GeSn alloys are
increasingly attractive as gain media for mid-IR lasers that can be monolithically integrated …
increasingly attractive as gain media for mid-IR lasers that can be monolithically integrated …
The growth of Ge and direct bandgap Ge 1− x Sn x on GaAs (001) by molecular beam epitaxy
Germanium tin (GeSn) is a tuneable narrow bandgap material, which has shown remarkable
promise for the industry of near-and mid-infrared technologies for high efficiency …
promise for the industry of near-and mid-infrared technologies for high efficiency …
Carrier Recombination Dynamics of Surface-Passivated Epitaxial (100)Ge, (110)Ge, and (111)Ge Layers by Atomic Layer Deposited Al2O3
Germanium (Ge) and its heterostructures with compound semiconductors offer a unique
optoelectronic functionality due to its pseudo-bandgap nature, that can be transformed to a …
optoelectronic functionality due to its pseudo-bandgap nature, that can be transformed to a …
Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy
Germanium films were grown on c-plane sapphire with a 10 nm AlAs buffer layer using
molecular beam epitaxy. The effects of Ge film thickness on the surface morphology and …
molecular beam epitaxy. The effects of Ge film thickness on the surface morphology and …
High-κ Gate Dielectric on Tunable Tensile Strained Germanium Heterogeneously Integrated on Silicon: Role of Strain, Process, and Interface States
Tensile strained germanium (ε-Ge) layers heterogeneously integrated on Si substrates are
of technological importance for nanoscale transistors and photonics. In this work, the tunable …
of technological importance for nanoscale transistors and photonics. In this work, the tunable …
Ion Implantation Damage Recovery in GeSn Thin Films
Germanium-tin (GeSn) alloys are promising materials for infrared photonics due to their
tunable direct bandgap and compatibility with silicon technology. However, implantation …
tunable direct bandgap and compatibility with silicon technology. However, implantation …
[HTML][HTML] Study of phase decoherence in GeSn (8%) through measurements of the weak antilocalization effect
Alloying germanium with tin offers a means to modulate germanium's electronic structure,
enabling a greater degree of control over quantum properties such as the retention of the …
enabling a greater degree of control over quantum properties such as the retention of the …
Role of dislocations on Sn diffusion during low temperature annealing of GeSn layers
A study of the mechanism of Sn out-diffusion was performed by annealing Ge 0.905 Sn
0.095 layers at 300 C. The changes in Sn composition and strain state were confirmed by x …
0.095 layers at 300 C. The changes in Sn composition and strain state were confirmed by x …