mm-Wave GaN-on-Si HEMTs with a PSAT of 3.9W/mm at 28GHz
We demonstrate GaN-on-Si HEMTs capable of meeting mm-wave requirements. We
compare the large-signal performance for thin barrier AlGaN/GaN and InAlN/GaN-based …
compare the large-signal performance for thin barrier AlGaN/GaN and InAlN/GaN-based …
ESD failures of GaN-on-Si D-mode AlGaN/GaN MIS-HEMT and HEMT devices for 5G telecommunications
In this paper, Gallium Nitride (GaN) Metal-Insulator-Semiconductor (MIS)-HEMTs are
compared with conventional Schottky Metal-Semiconductor HEMTs in terms of DC and ESD …
compared with conventional Schottky Metal-Semiconductor HEMTs in terms of DC and ESD …
Linearity assessment of GaN HEMTs on Si using nonlinear characterisation
R ElKashlan, A Khaled, R Rodriguez… - 2021 16th European …, 2022 - ieeexplore.ieee.org
We investigate the effect of varying the gate-to-drain spacing and the gate field-plate on the
device linearity of GaN HEMTs on Si for 0.11 μm, 0.15 μm, and 0.19 μm gate lengths. The …
device linearity of GaN HEMTs on Si for 0.11 μm, 0.15 μm, and 0.19 μm gate lengths. The …
RF linearity trade-offs for varying T-gate geometries of GaN HEMTs on Si
R ElKashlan, A Khaled, R Rodriguez… - International Journal of …, 2023 - cambridge.org
Short-channel Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) often utilize
T-shape gates due to their large gate-line cross-sectional area and subsequent fMAX …
T-shape gates due to their large gate-line cross-sectional area and subsequent fMAX …
GaN High‐Electron‐Mobility Transistors with Superconducting Nb Gates for Low‐Noise Cryogenic Applications
MA Mebarki, R Ferrand-Drake Del Castillo… - … status solidi (a), 2023 - Wiley Online Library
The successful integration of superconducting niobium (Nb) gate electrodes into cryogenic
gallium nitride (GaN)‐based high‐electron‐mobility transistors (HEMTs) is reported. This is …
gallium nitride (GaN)‐based high‐electron‐mobility transistors (HEMTs) is reported. This is …
Transistor GaN sur Si 200mm compatible CMOS pour l'amplification de puissance en bande Ka: optimisation de l'empilement de grille
A Chanuel - 2022 - theses.hal.science
La brique de grille des transistors GaN nécessite un dimensionnement plus compact avec
une longueur plus courte (Lg~ 150 nm) et une barrière plus fine (< 10 nm) pour le …
une longueur plus courte (Lg~ 150 nm) et une barrière plus fine (< 10 nm) pour le …
RF ESD Exploration in Si/III-V Heterogeneous Integration for 5G/B5G Applications
When moving to the 5G telecommunication era, higher data rate and thus higher bandwidth
are the main requirements to enable this evolution. For RF ESD protection design in …
are the main requirements to enable this evolution. For RF ESD protection design in …
[PDF][PDF] GaN-on-Si Technology for Modern Wireless Communication Systems: Optimisation Insight Using RF Characterisation
SPDIP Wambacq, IB Parvais, IW Meulebroeck… - researchportal.vub.be
De stijgende complexiteit van onze moderne communicatiesystemen heeft een optimalisatie
te weeg gebracht voor elke specifieke functie op zich, en dit voor elke technologie …
te weeg gebracht voor elke specifieke functie op zich, en dit voor elke technologie …
Transistors with source-connected field plates
C Zhu, B Grote, BMR Green - US Patent 12,148,820, 2024 - Google Patents
Placement of a field plate in a field-effect transistor is optimized by using multiple dielectric
layers such that a first end of field plate is separated from a channel region of the transistor …
layers such that a first end of field plate is separated from a channel region of the transistor …